Ulsi Technology

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 50,8 Mb
Release : 2012-04-02
Category : Technology & Engineering
ISBN : 9780470662540

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Author : Chih-Hang Tung,George T. T. Sheng,Chih-Yuan Lu
Publisher : John Wiley & Sons
Page : 688 pages
File Size : 51,6 Mb
Release : 2003-10-06
Category : Technology & Engineering
ISBN : 0471457728

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ULSI Semiconductor Technology Atlas by Chih-Hang Tung,George T. T. Sheng,Chih-Yuan Lu Pdf

More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 54,9 Mb
Release : 2012-02-17
Category : Technology & Engineering
ISBN : 9781119966869

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Author : C. Y. Chang,S. M. Sze
Publisher : McGraw-Hill Science, Engineering & Mathematics
Page : 756 pages
File Size : 54,8 Mb
Release : 1996
Category : Technology & Engineering
ISBN : UOM:39015049097325

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ULSI Technology by C. Y. Chang,S. M. Sze Pdf

"This text follows the tradition of Sze's highly successful pioneering text on VLSI technology and is updated with the latest advances in the field of microelectronic chip fabrication. Since computer chips are foundations of modern electronics, these topics are essential for the next generation of USLI technologies, allowing more transistors to be packaged on a single chip. Contributing to each chapter are industry experts, specializing in topics such as epitaxy with low temperature process, rapid thermal processes, low damage plasma reactive ion etching, fine line litography, cleaning technology, clean room technology, packing and reliability."--

Author : David G. Seiler
Publisher : American Institute of Physics
Page : 868 pages
File Size : 43,9 Mb
Release : 2003-10-08
Category : Computers
ISBN : UOM:39015052982736

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Characterization and Metrology for ULSI Technology: 2003 by David G. Seiler Pdf

The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.

Author : David G. Seiler
Publisher : American Institute of Physics
Page : 714 pages
File Size : 44,9 Mb
Release : 2005-09-29
Category : Science
ISBN : UOM:39015069190943

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Characterization and Metrology for ULSI Technology 2005 by David G. Seiler Pdf

The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.

Author : David G. Seiler
Publisher : Unknown
Page : 734 pages
File Size : 49,7 Mb
Release : 2001
Category : Integrated circuits
ISBN : UOM:39015042561129

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Characterization and Metrology for ULSI Technology, 2000 by David G. Seiler Pdf

Author : Fumio Shimura
Publisher : Elsevier
Page : 435 pages
File Size : 43,5 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323150484

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Semiconductor Silicon Crystal Technology by Fumio Shimura Pdf

Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.

Author : National Institute of Standards and Technology (U.S.),National Semiconductor Metrology Program (U.S.)
Publisher : Unknown
Page : 160 pages
File Size : 42,5 Mb
Release : 2000
Category : Semiconductors
ISBN : UOM:39015048215175

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National Semiconductor Metrology Program by National Institute of Standards and Technology (U.S.),National Semiconductor Metrology Program (U.S.) Pdf

Author : Anonim
Publisher : Unknown
Page : 160 pages
File Size : 48,7 Mb
Release : 2000
Category : Electronic
ISBN : STANFORD:36105050150742

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National Semiconductor Metrology Program, NIST List OF Publications, LP 103, May 2000 by Anonim Pdf

Author : Cullis
Publisher : CRC Press
Page : 704 pages
File Size : 40,9 Mb
Release : 2018-01-10
Category : Technology & Engineering
ISBN : 9781351091534

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Microscopy of Semiconducting Materials 2003 by Cullis Pdf

Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.

Author : Cher Ming Tan
Publisher : World Scientific
Page : 312 pages
File Size : 50,6 Mb
Release : 2010
Category : Technology & Engineering
ISBN : 9789814273329

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Electromigration in ULSI Interconnections by Cher Ming Tan Pdf

Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Author : Serge Luryi,Yoon Soo Park,Michael S Shur,Jimmy Xu,Alexander Zaslavsky
Publisher : World Scientific
Page : 426 pages
File Size : 49,7 Mb
Release : 2000-08-07
Category : Technology & Engineering
ISBN : 9789814542821

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Frontiers In Electronics: From Materials To Systems, 1999 Workshop On Frontiers In Electronics by Serge Luryi,Yoon Soo Park,Michael S Shur,Jimmy Xu,Alexander Zaslavsky Pdf

The rapid pace of the electronic technology evolution compels a merger of technical areas such as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology. The 1999 Workshop on Frontiers in Electronics gathered experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms. The proceedings addresses controversial issues, provocative views, and visionary outlooks. Also included are discussions on the future trends, the directions of electronics technology and the market pulls, as well as the necessary policy and infrastructure changes.

Author : Lorenzo Pavesi,Sergey Gaponenko,Luca Dal Negro
Publisher : Springer Science & Business Media
Page : 502 pages
File Size : 47,8 Mb
Release : 2003-03-31
Category : Science
ISBN : 1402011946

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Towards the First Silicon Laser by Lorenzo Pavesi,Sergey Gaponenko,Luca Dal Negro Pdf

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

Author : Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba
Publisher : Springer Science & Business Media
Page : 552 pages
File Size : 45,9 Mb
Release : 2009-09-19
Category : Science
ISBN : 9780387958682

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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba Pdf

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.