Advanced Interconnects For Ulsi Technology

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 44,9 Mb
Release : 2012-02-17
Category : Technology & Engineering
ISBN : 9781119966869

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Author : Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba
Publisher : Springer Science & Business Media
Page : 552 pages
File Size : 47,5 Mb
Release : 2009-09-19
Category : Science
ISBN : 9780387958682

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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba Pdf

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Author : Chih-Hang Tung,George T. T. Sheng,Chih-Yuan Lu
Publisher : John Wiley & Sons
Page : 688 pages
File Size : 44,6 Mb
Release : 2003-10-06
Category : Technology & Engineering
ISBN : 0471457728

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ULSI Semiconductor Technology Atlas by Chih-Hang Tung,George T. T. Sheng,Chih-Yuan Lu Pdf

More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

Author : Cher Ming Tan
Publisher : World Scientific
Page : 312 pages
File Size : 53,5 Mb
Release : 2010
Category : Technology & Engineering
ISBN : 9789814273329

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Electromigration in ULSI Interconnections by Cher Ming Tan Pdf

Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Author : Tapan Gupta
Publisher : Springer Science & Business Media
Page : 423 pages
File Size : 40,5 Mb
Release : 2010-01-22
Category : Technology & Engineering
ISBN : 9781441900760

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Copper Interconnect Technology by Tapan Gupta Pdf

Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Author : Ehrenfried Zschech,Caroline Whelan,Thomas Mikolajick
Publisher : Springer Science & Business Media
Page : 498 pages
File Size : 44,7 Mb
Release : 2006-07-02
Category : Technology & Engineering
ISBN : 9781846282355

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Materials for Information Technology by Ehrenfried Zschech,Caroline Whelan,Thomas Mikolajick Pdf

This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Author : Jari Nurmi,H. Tenhunen,J. Isoaho,Axel Jantsch
Publisher : Springer Science & Business Media
Page : 450 pages
File Size : 47,7 Mb
Release : 2006-03-20
Category : Technology & Engineering
ISBN : 9781402078361

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Interconnect-Centric Design for Advanced SOC and NOC by Jari Nurmi,H. Tenhunen,J. Isoaho,Axel Jantsch Pdf

In Interconnect-centric Design for Advanced SoC and NoC, we have tried to create a comprehensive understanding about on-chip interconnect characteristics, design methodologies, layered views on different abstraction levels and finally about applying the interconnect-centric design in system-on-chip design. Traditionally, on-chip communication design has been done using rather ad-hoc and informal approaches that fail to meet some of the challenges posed by next-generation SOC designs, such as performance and throughput, power and energy, reliability, predictability, synchronization, and management of concurrency. To address these challenges, it is critical to take a global view of the communication problem, and decompose it along lines that make it more tractable. We believe that a layered approach similar to that defined by the communication networks community should also be used for on-chip communication design. The design issues are handled on physical and circuit layer, logic and architecture layer, and from system design methodology and tools point of view. Formal communication modeling and refinement is used to bridge the communication layers, and network-centric modeling of multiprocessor on-chip networks and socket-based design will serve the development of platforms for SoC and NoC integration. Interconnect-centric Design for Advanced SoC and NoC is concluded by two application examples: interconnect and memory organization in SoCs for advanced set-top boxes and TV, and a case study in NoC platform design for more generic applications.

Author : Daniel C. Edelstein
Publisher : Unknown
Page : 608 pages
File Size : 46,5 Mb
Release : 1999-10-07
Category : Technology & Engineering
ISBN : UOM:39015042090459

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Advanced Interconnects and Contacts: Volume 564 by Daniel C. Edelstein Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : Min Zhang
Publisher : Unknown
Page : 1016 pages
File Size : 40,6 Mb
Release : 1998
Category : Electromechanical devices
ISBN : CORNELL:31924085323347

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1998 5th International Conference on Solid-State and Integrated Circuit Technology by Min Zhang Pdf

Author : Anonim
Publisher : Unknown
Page : 440 pages
File Size : 42,5 Mb
Release : 2004
Category : Dielectric films
ISBN : UOM:39015058889430

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Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics by Anonim Pdf

Author : Materials Research Society. Meeting
Publisher : Unknown
Page : 544 pages
File Size : 44,9 Mb
Release : 2003
Category : Dielectric films
ISBN : UCSD:31822032330201

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Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, 2003 by Materials Research Society. Meeting Pdf

Author : Anonim
Publisher : Unknown
Page : 806 pages
File Size : 49,9 Mb
Release : 2001
Category : Integrated circuits
ISBN : UIUC:30112050737052

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Proceedings by Anonim Pdf

Author : R. J. Carter
Publisher : Unknown
Page : 432 pages
File Size : 42,5 Mb
Release : 2004-09
Category : Technology & Engineering
ISBN : UCSD:31822032306177

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Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004 by R. J. Carter Pdf

The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.

Author : Cher Ming Tan,Feifei He
Publisher : Springer
Page : 0 pages
File Size : 44,6 Mb
Release : 2013-05-04
Category : Technology & Engineering
ISBN : 9814451207

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Electromigration Modeling at Circuit Layout Level by Cher Ming Tan,Feifei He Pdf

Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

Author : Robert Havemann
Publisher : Mrs Conference Proceedings
Page : 640 pages
File Size : 45,6 Mb
Release : 1997
Category : Computers
ISBN : UOM:39015040062161

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Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 by Robert Havemann Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.