Electromigration In Ulsi Interconnections

Author : Cher Ming Tan
Publisher : World Scientific
Page : 312 pages
File Size : 43,8 Mb
Release : 2010
Category : Computers
ISBN : 9789814273336

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Electromigration in ULSI Interconnections by Cher Ming Tan Pdf

Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 49,7 Mb
Release : 2024-04-30
Category : Electronic
ISBN : 9789814467933

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Electromigration in ULSI Interconnections by Anonim Pdf

Author : Cher Ming Tan,Wei Li,Zhenghao Gan,Yuejin Hou
Publisher : Springer Science & Business Media
Page : 152 pages
File Size : 45,6 Mb
Release : 2011-03-28
Category : Technology & Engineering
ISBN : 9780857293107

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Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by Cher Ming Tan,Wei Li,Zhenghao Gan,Yuejin Hou Pdf

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

Author : Chin-Chi Teng
Publisher : Unknown
Page : 254 pages
File Size : 50,6 Mb
Release : 1996
Category : Electronic
ISBN : OCLC:39749826

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Hierarchical Electromigration Reliability Diagnosis for ULSI Interconnects by Chin-Chi Teng Pdf

Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a metallic interconnect is stressed under high current density. In recent years, the line width of ULSI interconnects has been shrunk into the submicron regime. This gives rise to serious concerns about electromigration-induced failures. To design an electromigration-reliable chip, a CAD tool that can provide the accurate worst-case electromigration reliability analysis is required. However, computing the worst-case electromigration reliability index, such as mean time-to-failure (MTF), for a single interconnect in a digital circuit is an NP-complete problem. It is even worse to consider all interconnects since so many interconnects exist in the entire circuit. In this research, a hierarchical electromigration reliability diagnosis method, which provides a feasible solution to this complicated problem, was proposed. The proposed electromigration diagnosis method uses two levels of diagnoses. The top of the hierarchy is an input pattern-independent electromigration diagnosis procedure. It can quickly identify those critical interconnects with potential electromigration reliability problems and the corresponding input patterns which cause the worst-case current stress to each critical interconnect; thus, the problem size of the worst-case electromigration diagnosis is significantly reduced and becomes tractable. Thereafter, designers can focus on the critical interconnects and feed those critical input patterns into a pattern-dependent electromigration-reliability simulation tool, iTEM, to compute the accurate electromigration-induced failure of the interconnect systems. One important feature of iTEM is that, in addition to the current density and interconnect geometry, it takes into account the steady-state temperature of every interconnect under the given operating condition. In a state-of-the-art chip, the temperature of the interconnect may result in a rise tens of degrees above the ambient due to Joule heating and heat conduction from the substrate. Neglecting the temperature effect on electromigration-induced failure can lead to intolerable prediction errors. Our electromigration diagnosis method combines the advantages of both the input pattern dependent and independent reliability diagnoses. This top-down approach not only handles large circuit layouts containing tens of thousands of transistors and interconnects even on a workstation, but also gives an accurate worst-case electromigration reliability estimation.

Author : Cher-Ming Tan,Udit Narula,Vivek Sangwan
Publisher : CRC Press
Page : 121 pages
File Size : 53,8 Mb
Release : 2021-11-24
Category : Science
ISBN : 9781000470680

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Graphene and VLSI Interconnects by Cher-Ming Tan,Udit Narula,Vivek Sangwan Pdf

Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 46,5 Mb
Release : 2012-04-02
Category : Technology & Engineering
ISBN : 9780470662540

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Author : Mrityunjay Singh,Tatsuki Ohji,Rajiv Asthana,Sanjay Mathur
Publisher : John Wiley & Sons
Page : 830 pages
File Size : 47,9 Mb
Release : 2011-09-26
Category : Technology & Engineering
ISBN : 9781118056769

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Ceramic Integration and Joining Technologies by Mrityunjay Singh,Tatsuki Ohji,Rajiv Asthana,Sanjay Mathur Pdf

This book joins and integrates ceramics and ceramic-based materials in various sectors of technology. A major imperative is to extract scientific information on joining and integration response of real, as well as model, material systems currently in a developmental stage. This book envisions integration in its broadest sense as a fundamental enabling technology at multiple length scales that span the macro, millimeter, micrometer and nanometer ranges. Consequently, the book addresses integration issues in such diverse areas as space power and propulsion, thermoelectric power generation, solar energy, micro-electro-mechanical systems (MEMS), solid oxide fuel cells (SOFC), multi-chip modules, prosthetic devices, and implanted biosensors and stimulators. The engineering challenge of designing and manufacturing complex structural, functional, and smart components and devices for the above applications from smaller, geometrically simpler units requires innovative development of new integration technology and skillful adaptation of existing technology.

Author : Ming He,Toh-Ming Lu
Publisher : Springer Science & Business Media
Page : 149 pages
File Size : 50,5 Mb
Release : 2012-02-02
Category : Technology & Engineering
ISBN : 1461418127

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Metal-Dielectric Interfaces in Gigascale Electronics by Ming He,Toh-Ming Lu Pdf

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Author : G. S. Mathad,Harzara S. Rathore,Y. Arita
Publisher : The Electrochemical Society
Page : 358 pages
File Size : 47,9 Mb
Release : 2000
Category : Copper
ISBN : 1566772540

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Interconnect and Contact Metallization for ULSI by G. S. Mathad,Harzara S. Rathore,Y. Arita Pdf

Author : Y.-L. Shen
Publisher : Springer Science & Business Media
Page : 290 pages
File Size : 46,7 Mb
Release : 2010-08-09
Category : Technology & Engineering
ISBN : 9781441963123

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Constrained Deformation of Materials by Y.-L. Shen Pdf

"Constrained Deformation of Materials: Devices, Heterogeneous Structures and Thermo-Mechanical Modeling" is an in-depth look at the mechanical analyses and modeling of advanced small-scale structures and heterogeneous material systems. Mechanical deformations in thin films and miniaturized materials, commonly found in microelectronic devices and packages, MEMS, nanostructures and composite and multi-phase materials, are heavily influenced by the external or internal physical confinement. A continuum mechanics-based approach is used, together with discussions on micro-mechanisms, to treat the subject in a systematic manner under the unified theme. Readers will find valuable information on the proper application of thermo-mechanics in numerical modeling as well as in the interpretation and prediction of physical material behavior, along with many case studies. Additionally, particular attention is paid to practical engineering relevance. Thus real-life reliability issues are discussed in detail to serve the needs of researchers and engineers alike.

Author : Electrochemical Society. Dielectric Science and Technology Division,Electrochemical Society. Electrodeposition Division,Electrochemical Society. Meeting
Publisher : Unknown
Page : 290 pages
File Size : 45,7 Mb
Release : 1999
Category : Science
ISBN : UOM:39015057617741

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Proceedings of the Symposia on Electrochemical Processing in ULSI Fabrication I by Electrochemical Society. Dielectric Science and Technology Division,Electrochemical Society. Electrodeposition Division,Electrochemical Society. Meeting Pdf

Author : Jens Lienig,Matthias Thiele
Publisher : Springer
Page : 159 pages
File Size : 43,8 Mb
Release : 2018-02-23
Category : Technology & Engineering
ISBN : 9783319735580

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Fundamentals of Electromigration-Aware Integrated Circuit Design by Jens Lienig,Matthias Thiele Pdf

The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Author : R.A. Levy
Publisher : Springer Science & Business Media
Page : 444 pages
File Size : 50,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461305415

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Reduced Thermal Processing for ULSI by R.A. Levy Pdf

As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Author : Alvin W. Strong,Ernest Y. Wu,Rolf-Peter Vollertsen,Jordi Sune,Giuseppe La Rosa,Timothy D. Sullivan,Stewart E. Rauch, III
Publisher : John Wiley & Sons
Page : 864 pages
File Size : 52,7 Mb
Release : 2009-10-13
Category : Technology & Engineering
ISBN : 047045525X

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Reliability Wearout Mechanisms in Advanced CMOS Technologies by Alvin W. Strong,Ernest Y. Wu,Rolf-Peter Vollertsen,Jordi Sune,Giuseppe La Rosa,Timothy D. Sullivan,Stewart E. Rauch, III Pdf

This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

Author : Anonim
Publisher : Unknown
Page : 1360 pages
File Size : 41,8 Mb
Release : 1995
Category : Electrical engineering
ISBN : OSU:32435051560209

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Science Abstracts by Anonim Pdf