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Author : Mark A. Prelas,Peter Gielisse,Galina Popovici
Publisher : Unknown
Page : 548 pages
File Size : 52,6 Mb
Release : 2014-01-15
Category : Electronic
ISBN : 9401101744
Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
Publisher : Springer Science & Business Media
Page : 481 pages
File Size : 54,5 Mb
Release : 2007-04-12
Category : Technology & Engineering
ISBN : 9783540472353
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Author : Mark A. Prelas,Peter Gielisse,Galina Popovici,Boris V. Spitsyn,Tina Stacy
Publisher : Springer Science & Business Media
Page : 523 pages
File Size : 46,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9789401101738
Proceedings of the NATO Advanced Research Workshop on `Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
Publisher : John Wiley & Sons
Page : 743 pages
File Size : 53,6 Mb
Release : 2022-01-10
Category : Technology & Engineering
ISBN : 9783527346714
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author : S. J. Pearton,C. R. Abernathy,F. Ren
Publisher : World Scientific
Page : 568 pages
File Size : 45,5 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810218842
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Page : 325 pages
File Size : 43,5 Mb
Release : 2016-11-03
Category : Computers
ISBN : 9781315351834
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author : S. J. Pearton
Publisher : Cambridge University Press
Page : 593 pages
File Size : 50,7 Mb
Release : 2013-01-15
Category : Technology & Engineering
ISBN : 9780080946757
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Author : Evgeny Katz
Publisher : John Wiley & Sons
Page : 566 pages
File Size : 40,7 Mb
Release : 2014-02-27
Category : Science
ISBN : 9783527673162
Here the renowned editor Evgeny Katz has chosen contributions that cover a wide range of examples and issues in implantable bioelectronics, resulting in an excellent overview of the topic. The various implants covered include biosensoric and prosthetic devices, as well as neural and brain implants, while ethical issues, suitable materials, biocompatibility, and energy-harvesting devices are also discussed. A must-have for both newcomers and established researchers in this interdisciplinary field that connects scientists from chemistry, material science, biology, medicine, and electrical engineering.
Author : Uttam Singisetti,Towhidur Razzak,Yuewei Zhang
Publisher : World Scientific
Page : 258 pages
File Size : 54,5 Mb
Release : 2019-12-10
Category : Technology & Engineering
ISBN : 9789811216497
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author : Meiyong Liao,Bo Shen,Zhanguo Wang
Publisher : Elsevier
Page : 503 pages
File Size : 55,8 Mb
Release : 2019-06-18
Category : Technology & Engineering
ISBN : 9780128172568
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author : Susanne Siebentritt,Uwe Rau
Publisher : Springer Science & Business Media
Page : 267 pages
File Size : 47,8 Mb
Release : 2006-02-25
Category : Science
ISBN : 9783540312932
Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.
Author : Katsuaki Suganuma
Publisher : Woodhead Publishing
Page : 240 pages
File Size : 44,5 Mb
Release : 2018-05-28
Category : Technology & Engineering
ISBN : 9780081020951
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 55,5 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author : Safa Kasap,Peter Capper
Publisher : Springer Science & Business Media
Page : 1409 pages
File Size : 50,7 Mb
Release : 2007-08-01
Category : Technology & Engineering
ISBN : 9780387291857
Contributions from well known and respected researchers throughout the world Thorough coverage of electronic and opto-electronic materials that today's electrical engineers, material scientists and physicists need Interdisciplinary approach encompasses research in disciplines such as materials science, electrical engineering, chemical engineering, mechanical engineering, physics and chemistry
Author : C.G. Van de Walle
Publisher : Elsevier
Page : 635 pages
File Size : 44,7 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780444599179
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
