1996 International Conference On Simulation Of Semiconductor Processes And Devices

Author : IEEE Electron Devices Society
Publisher : IEEE
Page : 184 pages
File Size : 41,7 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 0780327454

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1996 International Conference on Simulation of Semiconductor Processes and Devices by IEEE Electron Devices Society Pdf

This conference is aimed at providing an opportunity for the presentation and discussion of the recent topics in process, device and circuit modeling for semiconductors. The proceedings contains all papers presented at the conference which are carefully selected by experts in the field. A valuable source and indispensable for all scientists and engineers engaged in research and development in semiconductor devices, the proceedings include a wide range of TCAD algorithms to user interfacesProcess Modeling; Impurity Modeling; Future Device Modeling; Advanced Silicon Device Modeling; Equipment and Topography Modeling; Mesh Generation and Circuit Model

Author : Anonim
Publisher : Unknown
Page : 184 pages
File Size : 51,8 Mb
Release : 1996
Category : Electronic
ISBN : OCLC:1132103346

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1996 International Conference on Simulation of Semiconductor Processes and Devices by Anonim Pdf

Author : Dimitris Tsoukalas,Christos Tsamis
Publisher : Springer Science & Business Media
Page : 463 pages
File Size : 50,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709162446

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Simulation of Semiconductor Processes and Devices 2001 by Dimitris Tsoukalas,Christos Tsamis Pdf

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Author : Anonim
Publisher : Unknown
Page : 368 pages
File Size : 47,5 Mb
Release : 2005
Category : Semiconductors
ISBN : UOM:39015058782403

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International Conference on Simulation of Semiconductor Processes and Devices by Anonim Pdf

Author : Kristin De Meyer,Serge Biesemans
Publisher : Springer Science & Business Media
Page : 423 pages
File Size : 52,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709168271

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Simulation of Semiconductor Processes and Devices 1998 by Kristin De Meyer,Serge Biesemans Pdf

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Author : Tibor Grasser
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 40,7 Mb
Release : 2007-09-18
Category : Computers
ISBN : 9783211728604

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Simulation of Semiconductor Processes and Devices 2007 by Tibor Grasser Pdf

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites

Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Page : 353 pages
File Size : 42,7 Mb
Release : 1997-01-01
Category : Technology & Engineering
ISBN : 0780337751

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1997 International Conference on Simulation of Semiconductor Processes and Devices by IEEE Electron Devices Society Pdf

This conference is aimed at providing an opportunity for presentation and discussion of topics in process, device and circuit modelling for semiconductors. The proceedings contains all papers presented and should serve as a source for scientists and engineers engaged in research and development.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 45,5 Mb
Release : 2000
Category : Electronic
ISBN : 0780362799

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Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on by Anonim Pdf

Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 554 pages
File Size : 51,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979

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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by Peter Pichler Pdf

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Author : Anonim
Publisher : IEEE Computer Society Press
Page : 329 pages
File Size : 49,9 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 0780378261

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2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices by Anonim Pdf

Taken from the proceedings of the 2003 International Conference of the Simulation of Semiconductor Processes and Devices (SISPAD 2003), this volume looks at electron devices.

Author : Anonim
Publisher : Unknown
Page : 353 pages
File Size : 40,8 Mb
Release : 1997
Category : Electronic
ISBN : OCLC:1132032275

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1997 International Conference on Simulation of Semiconductor Processes and Devices by Anonim Pdf

Author : C. S. Murthy,G. R. Srinivasan,Scott T. Dunham
Publisher : The Electrochemical Society
Page : 244 pages
File Size : 55,9 Mb
Release : 1999
Category : Science
ISBN : 1566772249

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Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology by C. S. Murthy,G. R. Srinivasan,Scott T. Dunham Pdf

Author : Siegfried Selberherr,Hannes Stippel,Ernst Strasser
Publisher : Springer Science & Business Media
Page : 525 pages
File Size : 47,8 Mb
Release : 2012-12-06
Category : Computers
ISBN : 9783709166574

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Simulation of Semiconductor Devices and Processes by Siegfried Selberherr,Hannes Stippel,Ernst Strasser Pdf

The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Author : IEEE Staff,Institute of Electrical and Electronics Engineers
Publisher : Unknown
Page : 324 pages
File Size : 52,8 Mb
Release : 2010
Category : Communication, Networking & Broadcasting
ISBN : 1424477018

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2010 International Conference on Simulation of Semiconductor Processes and Devices by IEEE Staff,Institute of Electrical and Electronics Engineers Pdf

Author : Massimo Rudan,Rossella Brunetti,Susanna Reggiani
Publisher : Springer Nature
Page : 1680 pages
File Size : 49,5 Mb
Release : 2022-11-10
Category : Technology & Engineering
ISBN : 9783030798277

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Springer Handbook of Semiconductor Devices by Massimo Rudan,Rossella Brunetti,Susanna Reggiani Pdf

This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.