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2007 Ieee International Integrated Reliability Workshop Final Report Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of 2007 Ieee International Integrated Reliability Workshop Final Report book. This book definitely worth reading, it is an incredibly well-written.
Author : Anonim
Publisher : IEEE
Page : 168 pages
File Size : 50,5 Mb
Release : 2007-01-01
Category : Technology & Engineering
ISBN : 1424411718
Author : Electron Devices Society,Institute of Electrical and Electronics Engineers,Reliability Society
Publisher : Unknown
Page : 168 pages
File Size : 44,8 Mb
Release : 2007
Category : Integrated circuits
ISBN : 1424411726
Author : IEEE Electron Devices Society
Publisher : IEEE
Page : 106 pages
File Size : 53,9 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 0780371674
Author : Anonim
Publisher : IEEE
Page : 161 pages
File Size : 40,6 Mb
Release : 2008
Category : Computers
ISBN : 1424440017
Author : IEEE Staff,Institute of Electrical and Electronics Engineers (New York, NY)
Publisher : Unknown
Page : 164 pages
File Size : 50,7 Mb
Release : 2011-10-16
Category : Integrated circuits
ISBN : 1457701138
Author : Samuel Vasconcelos Araújo
Publisher : kassel university press GmbH
Page : 238 pages
File Size : 40,6 Mb
Release : 2013-06-13
Category : Semiconductors
ISBN : 9783862194865
Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 40,7 Mb
Release : 2012-04-02
Category : Technology & Engineering
ISBN : 9780470662540
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author : Eishi H. Ibe
Publisher : John Wiley & Sons
Page : 292 pages
File Size : 41,9 Mb
Release : 2015-03-02
Category : Technology & Engineering
ISBN : 9781118479292
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.
Author : Titu I. Băjenescu,Marius I. Bâzu
Publisher : Artech House
Page : 706 pages
File Size : 45,7 Mb
Release : 2010
Category : Technology & Engineering
ISBN : 9781596934368
The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.
Author : Steve Kupke
Publisher : BoD – Books on Demand
Page : 125 pages
File Size : 43,5 Mb
Release : 2016-06-06
Category : Technology & Engineering
ISBN : 9783741208690
After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage. The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.
Author : Niranjan N. Chiplunkar,Takanori Fukao
Publisher : Springer Nature
Page : 1456 pages
File Size : 53,7 Mb
Release : 2020-08-13
Category : Technology & Engineering
ISBN : 9789811535147
This book presents selected peer-reviewed papers from the International Conference on Artificial Intelligence and Data Engineering (AIDE 2019). The topics covered are broadly divided into four groups: artificial intelligence, machine vision and robotics, ambient intelligence, and data engineering. The book discusses recent technological advances in the emerging fields of artificial intelligence, machine learning, robotics, virtual reality, augmented reality, bioinformatics, intelligent systems, cognitive systems, computational intelligence, neural networks, evolutionary computation, speech processing, Internet of Things, big data challenges, data mining, information retrieval, and natural language processing. Given its scope, this book can be useful for students, researchers, and professionals interested in the growing applications of artificial intelligence and data engineering.
Author : Anonim
Publisher : Unknown
Page : 202 pages
File Size : 40,5 Mb
Release : 2005
Category : Integrated circuits
ISBN : UOM:39015058744502
Author : Souvik Mahapatra
Publisher : Springer
Page : 269 pages
File Size : 52,8 Mb
Release : 2015-08-05
Category : Technology & Engineering
ISBN : 9788132225089
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Author : Philip Teichmann
Publisher : Springer Science & Business Media
Page : 166 pages
File Size : 48,6 Mb
Release : 2011-10-29
Category : Technology & Engineering
ISBN : 9400723458
Adiabatic logic is a potential successor for static CMOS circuit design when it comes to ultra-low-power energy consumption. Future development like the evolutionary shrinking of the minimum feature size as well as revolutionary novel transistor concepts will change the gate level savings gained by adiabatic logic. In addition, the impact of worsening degradation effects has to be considered in the design of adiabatic circuits. The impact of the technology trends on the figures of merit of adiabatic logic, energy saving potential and optimum operating frequency, are investigated, as well as degradation related issues. Adiabatic logic benefits from future devices, is not susceptible to Hot Carrier Injection, and shows less impact of Bias Temperature Instability than static CMOS circuits. Major interest also lies on the efficient generation of the applied power-clock signal. This oscillating power supply can be used to save energy in short idle times by disconnecting circuits. An efficient way to generate the power-clock is by means of the synchronous 2N2P LC oscillator, which is also robust with respect to pattern-induced capacitive variations. An easy to implement but powerful power-clock gating supplement is proposed by gating the synchronization signals. Diverse implementations to shut down the system are presented and rated for their applicability and other aspects like energy reduction capability and data retention. Advantageous usage of adiabatic logic requires compact and efficient arithmetic structures. A broad variety of adder structures and a Coordinate Rotation Digital Computer are compared and rated according to energy consumption and area usage, and the resulting energy saving potential against static CMOS proves the ultra-low-power capability of adiabatic logic. In the end, a new circuit topology has to compete with static CMOS also in productivity. On a 130nm test chip, a large scale test vehicle containing an FIR filter was implemented in adiabatic logic, utilizing a standard, library-based design flow, fabricated, measured and compared to simulations of a static CMOS counterpart, with measured saving factors compliant to the values gained by simulation. This leads to the conclusion that adiabatic logic is ready for productive design due to compatibility not only to CMOS technology, but also to electronic design automation (EDA) tools developed for static CMOS system design.
Author : Felipe Rocha da Rosa,Luciano Ost,Ricardo Reis
Publisher : Springer Nature
Page : 142 pages
File Size : 55,8 Mb
Release : 2020-11-02
Category : Technology & Engineering
ISBN : 9783030557041
This book describes the benefits and drawbacks inherent in the use of virtual platforms (VPs) to perform fast and early soft error assessment of multicore systems. The authors show that VPs provide engineers with appropriate means to investigate new and more efficient fault injection and mitigation techniques. Coverage also includes the use of machine learning techniques (e.g., linear regression) to speed-up the soft error evaluation process by pinpointing parameters (e.g., architectural) with the most substantial impact on the software stack dependability. This book provides valuable information and insight through more than 3 million individual scenarios and 2 million simulation-hours. Further, this book explores machine learning techniques usage to navigate large fault injection datasets.