Compound Semiconductors 2001

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Compound Semiconductors 2001

Author : Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi
Publisher : CRC Press
Page : 908 pages
File Size : 42,7 Mb
Release : 2002-09-30
Category : Science
ISBN : 0750308567

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Compound Semiconductors 2001 by Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi Pdf

An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Compound Semiconductors 2001

Author : Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi
Publisher : CRC Press
Page : 888 pages
File Size : 53,5 Mb
Release : 2002-09-30
Category : Science
ISBN : 9781482268980

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Compound Semiconductors 2001 by Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi Pdf

An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical

Compound Semiconductors 2002

Author : Marc Ilegems,Gunter Weimann,Joachim Wagner
Publisher : CRC Press
Page : 502 pages
File Size : 41,5 Mb
Release : 2003-09-01
Category : Science
ISBN : 0750309423

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Compound Semiconductors 2002 by Marc Ilegems,Gunter Weimann,Joachim Wagner Pdf

A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.

State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II

Author : Electrochemical Society. Electronics Division,Electrochemical Society. Sensor Division
Publisher : The Electrochemical Society
Page : 380 pages
File Size : 42,9 Mb
Release : 2002
Category : Technology & Engineering
ISBN : 1566773695

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State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II by Electrochemical Society. Electronics Division,Electrochemical Society. Sensor Division Pdf

III–V Compound Semiconductors and Devices

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 52,6 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

III–V Compound Semiconductors

Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 603 pages
File Size : 46,5 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236

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III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

Compound Semiconductor Integrated Circuits

Author : Tho T Vu
Publisher : World Scientific
Page : 364 pages
File Size : 53,5 Mb
Release : 2003-04-02
Category : Technology & Engineering
ISBN : 9789814486439

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Compound Semiconductor Integrated Circuits by Tho T Vu Pdf

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji)The Transforming MMIC (E J Martinez)Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.)Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.)Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford)Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.)Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston)and other papers Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits. Keywords:High Speed Electronics and Systems;Compound Semiconductor Integrated Circuits;Wireline Fiber-Optic Lightwave Transmissions;Commercial and Military Applications;Digital Technologies

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices

Author : Hadis Morkoç
Publisher : John Wiley & Sons
Page : 902 pages
File Size : 40,5 Mb
Release : 2009-07-30
Category : Technology & Engineering
ISBN : 9783527628452

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Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices by Hadis Morkoç Pdf

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.

Compound Semiconductor

Author : Anonim
Publisher : Unknown
Page : 508 pages
File Size : 43,6 Mb
Release : 2004
Category : Compound semiconductors
ISBN : UOM:39015058754014

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Compound Semiconductor by Anonim Pdf

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author : C. O'Dwyer
Publisher : The Electrochemical Society
Page : 647 pages
File Size : 46,6 Mb
Release : 2007
Category : Compound semiconductors
ISBN : 9781566775519

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State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2 by C. O'Dwyer Pdf

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

Physics of Semiconductors 2002

Author : J.H Davies,A.R Long
Publisher : CRC Press
Page : 330 pages
File Size : 53,9 Mb
Release : 2003-05-01
Category : Science
ISBN : 0750309245

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Physics of Semiconductors 2002 by J.H Davies,A.R Long Pdf

The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around the world. Plenary and invited papers (34) have been printed in the paper volume, and all submitted papers (742) are included on the CD-ROM. These proceedings provide an international perspective on the latest research and a review of recent developments in semiconductor physics. Topics range from growth and properties of bulk semiconductors to the optical and transport properties of semiconductor nanostructures. There are 742 papers, mostly arranged in chapters on Bulk, dynamics, defects and impurities, growth (147); Heterostructures, quantum wells, superlattices - optical (138); Heterostructures, quantum wells, superlattices - transport (97); Quantum nanostructures - optical (120); Quantum nanostructures - transport (85); New materials and concepts (52); Novel devices (43); and Spin and magnetic effects (48). A number of trends were identified in setting up the overall programme of the conference. There were significant contributions from new directions of research such as nanostructures and one-dimensional physics; spin effects and ferromagnetism; and terahertz and subband physics. These complemented areas in which the conference has traditional strengths, such as defects and bulk materials; crystal growth; quantum transport; and optical properties. As a record of a conference that covers the whole range of semiconductor physics, this book is an essential reference for researchers working on semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.