Crystal Growth Of Gallium Nitride

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 52,5 Mb
Release : 2006
Category : Electronic
ISBN : 0792375610

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Crystal Growth of Gallium Nitride by Anonim Pdf

Author : Dirk Ehrentraut,Elke Meissner,Michal Bockowski
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 40,7 Mb
Release : 2010-06-14
Category : Science
ISBN : 9783642048302

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Technology of Gallium Nitride Crystal Growth by Dirk Ehrentraut,Elke Meissner,Michal Bockowski Pdf

This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Author : Dirk Ehrentraut,Elke Meissner,Michal Bockowski
Publisher : Springer
Page : 326 pages
File Size : 42,8 Mb
Release : 2010-06-24
Category : Science
ISBN : 3642048285

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Technology of Gallium Nitride Crystal Growth by Dirk Ehrentraut,Elke Meissner,Michal Bockowski Pdf

This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Author : Patrick Hofmann
Publisher : BoD – Books on Demand
Page : 166 pages
File Size : 46,6 Mb
Release : 2018-08-15
Category : Science
ISBN : 9783752884920

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Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride by Patrick Hofmann Pdf

This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.

Author : K. Byrappa
Publisher : Springer Science & Business Media
Page : 618 pages
File Size : 40,6 Mb
Release : 2003-04-17
Category : Science
ISBN : 3540003673

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Crystal Growth Technology by K. Byrappa Pdf

Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.

Author : George V. Karas
Publisher : Nova Publishers
Page : 170 pages
File Size : 41,6 Mb
Release : 2005
Category : Science
ISBN : 1594545391

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New Developments in Crystal Growth Research by George V. Karas Pdf

New Developments In Crystal Growth

Author : Elke Meissner,Rainer Niewa
Publisher : Springer Nature
Page : 351 pages
File Size : 41,5 Mb
Release : 2021-02-07
Category : Technology & Engineering
ISBN : 9783030563059

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Ammonothermal Synthesis and Crystal Growth of Nitrides by Elke Meissner,Rainer Niewa Pdf

This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

Author : E.I. Givargizov,S.A. Grinberg
Publisher : Springer
Page : 238 pages
File Size : 54,9 Mb
Release : 2012-05-07
Category : Science
ISBN : 1461571278

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Growth of Crystals by E.I. Givargizov,S.A. Grinberg Pdf

The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).

Author : STANFORD UNIV CALIF CENTER FOR MATERIALS RESEARCH.
Publisher : Unknown
Page : 136 pages
File Size : 47,8 Mb
Release : 1980
Category : Electronic
ISBN : STANFORD:36105046318015

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A Feasibility Study on the Growth of Bulk GaN Single Crystals by STANFORD UNIV CALIF CENTER FOR MATERIALS RESEARCH. Pdf

In addition to problems of multinucleation, low solubility, and slow convection experienced in earlier experiments, it is postulated that the solubility of GaN in gallium follows a reciprocal temperature dependence. In spite of this handicap, it has been found possible to achieve conditions under which the nucleation of GaN is reduced in comparison to previous experiments and so to produce larger GaN crystals. The major aim of experiments in the near future will be to obtain a more complete understanding of the conditions required to produce large crystals of GaN.

Author : George V. Karas
Publisher : Nova Publishers
Page : 250 pages
File Size : 44,8 Mb
Release : 2006
Category : Science
ISBN : 1594545405

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Focus on Crystal Growth Research by George V. Karas Pdf

Experimental and theoretical aspects of crystal growth and its applications, e.g. in devices, are within the scope of these new books . Experimental and theoretical contributions are included in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallisation in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapour deposition, growth of III-V and II-VI and other semiconductors; characterisation of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multi-layer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials.

Author : Masataka Higashiwaki,Shizuo Fujita
Publisher : Springer Nature
Page : 768 pages
File Size : 50,5 Mb
Release : 2020-04-23
Category : Technology & Engineering
ISBN : 9783030371531

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Gallium Oxide by Masataka Higashiwaki,Shizuo Fujita Pdf

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Author : Roberto Fornari
Publisher : Woodhead Publishing
Page : 596 pages
File Size : 40,5 Mb
Release : 2018-09-18
Category : Technology & Engineering
ISBN : 9780081020975

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Single Crystals of Electronic Materials by Roberto Fornari Pdf

Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond

Author : Fong Chee Yong ,Ng Sha Shiong
Publisher : Penerbit USM
Page : 127 pages
File Size : 52,6 Mb
Release : 2019
Category : Science
ISBN : 9789674612948

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Sol-Gel Spin Coating Growth Of Gallium Nitride Thin Films A Simple, Safe, and Cheap Approach (Penerbit USM) by Fong Chee Yong ,Ng Sha Shiong Pdf

Wide direct band gap gallium nitride (GaN) semiconductor has received significant attention as an ideal material for various applications in the optoelectronic devices. One major use of GaN is the development of energy-efficient solid state light-emitting diodes. Currently, most commercially available GaN semiconductor are produced through advanced deposition techniques which involve sophisticated technologies and are relatively expensive and complicated to setup. As an alternative, the sol-gel spin coating method, which is relatively simpler, cheaper, safer, and more scalable was proposed. In this book, the process route and recipe for producing highly c-oriented crystalline GaN thin films via the sol-gel spin coating approach were described in detail. Some insights into the factors affecting the surface morphology as well as structural and optical properties of the deposited films were presented. Eventually, this book could inspire further studies into the development of low-cost GaN thin films.

Author : C. R. Abernathy,H. Amano,J. C. Zolper
Publisher : Materials Research Society
Page : 534 pages
File Size : 50,7 Mb
Release : 1997-08-13
Category : Technology & Engineering
ISBN : 155899372X

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Gallium Nitride and Related Materials II: Volume 468 by C. R. Abernathy,H. Amano,J. C. Zolper Pdf

This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Author : Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen
Publisher : CRC Press
Page : 984 pages
File Size : 52,7 Mb
Release : 2017-10-20
Category : Science
ISBN : 9781351648059

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Handbook of GaN Semiconductor Materials and Devices by Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen Pdf

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.