Doping Iii V Compound Semiconductor Devices With Group Vi

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 55,8 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Author : E. Fred Schubert
Publisher : E. Fred Schubert
Page : 128 pages
File Size : 46,9 Mb
Release : 2015-08-18
Category : Science
ISBN : 9780986382635

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Doping in III-V Semiconductors by E. Fred Schubert Pdf

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Author : S J Pearton,C R Abernathy,F Ren
Publisher : World Scientific
Page : 560 pages
File Size : 46,7 Mb
Release : 1996-11-09
Category : Technology & Engineering
ISBN : 9789814501590

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Topics in Growth and Device Processing of III-V Semiconductors by S J Pearton,C R Abernathy,F Ren Pdf

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems. Contents:Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect Transistors Readership: Engineers and condensed matter physicists. keywords:Arsenide;Indium Phosphide;Processing;Semiconductors;Etching;Implantation;Contacts;Implant Isolation;Field Effect Transistors;GaAs-on-Si

Author : Anthony C. Jones,Paul O'Brien
Publisher : John Wiley & Sons
Page : 352 pages
File Size : 52,6 Mb
Release : 2008-11-20
Category : Science
ISBN : 9783527614622

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CVD of Compound Semiconductors by Anthony C. Jones,Paul O'Brien Pdf

Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.

Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
Page : 188 pages
File Size : 54,6 Mb
Release : 2008-11-21
Category : Technology & Engineering
ISBN : 9783527611775

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Compound Semiconductor Devices by Kenneth A. Jackson Pdf

Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.

Author : Anonim
Publisher : Unknown
Page : 1910 pages
File Size : 52,8 Mb
Release : 1989
Category : Patents
ISBN : MINN:31951D00161113U

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Index of Patents Issued from the United States Patent and Trademark Office by Anonim Pdf

Author : United States. Patent and Trademark Office
Publisher : Unknown
Page : 1436 pages
File Size : 41,9 Mb
Release : 2001
Category : Patents
ISBN : PSU:000066182757

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Official Gazette of the United States Patent and Trademark Office by United States. Patent and Trademark Office Pdf

Author : Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou
Publisher : Springer Nature
Page : 65 pages
File Size : 54,5 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020285

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Compound Semiconductor Materials and Devices by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou Pdf

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Author : D. Nirmal,J. Ajayan
Publisher : CRC Press
Page : 430 pages
File Size : 51,6 Mb
Release : 2019-05-14
Category : Science
ISBN : 9780429862533

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Handbook for III-V High Electron Mobility Transistor Technologies by D. Nirmal,J. Ajayan Pdf

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Author : Fan Ren,Stephen J Pearton
Publisher : CRC Press
Page : 318 pages
File Size : 41,8 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439813881

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Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications by Fan Ren,Stephen J Pearton Pdf

Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments

Author : NAIR, B. SOMANATHAN,DEEPA, S. R.
Publisher : PHI Learning Pvt. Ltd.
Page : 564 pages
File Size : 43,6 Mb
Release : 2018-11-01
Category : Technology & Engineering
ISBN : 9789387472280

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SOLID STATE DEVICES by NAIR, B. SOMANATHAN,DEEPA, S. R. Pdf

Designed as a text for undergraduate students of engineering in Electrical, Electronics, and Computer Science and IT disciplines as well as undergraduate students (B.Sc.) of physics and electronics as also for postgraduate students of physics and electronics, this compact and accessible text endeavours to simplify the theory of solid state devices so that even an average student will be able to understand the concepts with ease. The authors, Prof. Somanathan Nair and Prof. S.R. Deepa, with their rich and long experience in teaching the subject, provide a detailed discussion of such topics as crystal structures of semiconductor materials, Miller indices, energy band theory of solids, energy level diagrams and mass action law. Besides, they give a masterly analysis of topics such as direct and indirect gap materials, Fermi–Dirac statistics, electrons in semiconductors, Hall effect, PN junction diodes, Zener and avalanche breakdowns, Schottky barrier diodes, bipolar junction transistors, MOS field-effect transistors, Early effect, Shockley diodes, SCRs, TRIAC, and IGBTs. In the Second Edition, two new chapters on opto-electronic devices and electro-optic devices have been added. The text has been thoroughly revised and updated. A number of solved problems and objective type questions have been included to help students develop grasp of the contents. This fully illustrated and well-organized text should prove invaluable to students pursuing various courses in engineering and physics. DISTINGUISHING FEATURES • Discusses the concepts in an easy-to-understand style. • Furnishes over 300 clear-cut diagrams to illustrate the discussed. • Gives a very large number of questions—short answer, fill in the blanks, tick the correct answer and review questions—to sharpen the minds of the reader. • Provides more than 200 fully solved numerical problems. • Gives answers to a large number of exercises.

Author : Samares Kar
Publisher : Springer Science & Business Media
Page : 515 pages
File Size : 43,6 Mb
Release : 2013-06-25
Category : Technology & Engineering
ISBN : 9783642365355

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High Permittivity Gate Dielectric Materials by Samares Kar Pdf

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Author : Ferdinand Scholz
Publisher : CRC Press
Page : 295 pages
File Size : 44,5 Mb
Release : 2017-10-06
Category : Science
ISBN : 9781351858717

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Compound Semiconductors by Ferdinand Scholz Pdf

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

Author : R.A. Levy
Publisher : Springer Science & Business Media
Page : 992 pages
File Size : 47,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9789400909175

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Microelectronic Materials and Processes by R.A. Levy Pdf

The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.

Author : Weimin Chen,Irina Buyanova
Publisher : CRC Press
Page : 345 pages
File Size : 43,5 Mb
Release : 2019-05-08
Category : Technology & Engineering
ISBN : 9780429533730

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Handbook of Spintronic Semiconductors by Weimin Chen,Irina Buyanova Pdf

This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.