Compound Semiconductor Devices

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III–V Compound Semiconductors and Devices

Keh Yung Cheng

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 43,8 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Compound Semiconductor Device Physics

Sandip Tiwari

Author : Sandip Tiwari
Publisher : Academic Press
Page : 828 pages
File Size : 40,8 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483289298

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Compound Semiconductor Device Physics by Sandip Tiwari Pdf

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding

Compound Semiconductor Materials and Devices

Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou

Author : Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou
Publisher : Springer Nature
Page : 65 pages
File Size : 42,9 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020285

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Compound Semiconductor Materials and Devices by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou Pdf

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Compound Semiconductors

Ferdinand Scholz

Author : Ferdinand Scholz
Publisher : CRC Press
Page : 295 pages
File Size : 41,9 Mb
Release : 2017-10-06
Category : Science
ISBN : 9781351858717

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Compound Semiconductors by Ferdinand Scholz Pdf

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

Compound Semiconductor Devices

Kenneth A. Jackson

Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
Page : 188 pages
File Size : 55,5 Mb
Release : 2008-11-21
Category : Technology & Engineering
ISBN : 9783527611775

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Compound Semiconductor Devices by Kenneth A. Jackson Pdf

Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.

Compound Semiconductor Device Modelling

Christopher M. Snowden,Robert E. Miles

Author : Christopher M. Snowden,Robert E. Miles
Publisher : Springer Science & Business Media
Page : 295 pages
File Size : 44,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781447120483

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Compound Semiconductor Device Modelling by Christopher M. Snowden,Robert E. Miles Pdf

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.

Handbook of Compound Semiconductors

Paul H. Holloway,Gary E. McGuire

Author : Paul H. Holloway,Gary E. McGuire
Publisher : Cambridge University Press
Page : 937 pages
File Size : 49,9 Mb
Release : 2008-10-19
Category : Technology & Engineering
ISBN : 9780080946146

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Handbook of Compound Semiconductors by Paul H. Holloway,Gary E. McGuire Pdf

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Carl Wilmsen

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 55,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351

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Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Compound Semiconductors 2001

Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi

Author : Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi
Publisher : CRC Press
Page : 908 pages
File Size : 51,5 Mb
Release : 2002-09-30
Category : Science
ISBN : 0750308567

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Compound Semiconductors 2001 by Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi Pdf

An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Novel Compound Semiconductor Nanowires

Fumitaro Ishikawa,Irina Buyanova

Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Page : 501 pages
File Size : 55,8 Mb
Release : 2017-10-17
Category : Science
ISBN : 9781315340722

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Novel Compound Semiconductor Nanowires by Fumitaro Ishikawa,Irina Buyanova Pdf

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Devices for Integrated Circuits

H. Craig Casey

Author : H. Craig Casey
Publisher : John Wiley & Sons
Page : 549 pages
File Size : 41,9 Mb
Release : 1998-12-14
Category : Technology & Engineering
ISBN : 9780471171348

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Devices for Integrated Circuits by H. Craig Casey Pdf

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Compound Semiconductors 2002

Marc Ilegems,Gunter Weimann,Joachim Wagner

Author : Marc Ilegems,Gunter Weimann,Joachim Wagner
Publisher : CRC Press
Page : 502 pages
File Size : 43,8 Mb
Release : 2003-09-01
Category : Science
ISBN : 0750309423

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Compound Semiconductors 2002 by Marc Ilegems,Gunter Weimann,Joachim Wagner Pdf

A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.

Compound Semiconductor Integrated Circuits

Tho T Vu

Author : Tho T Vu
Publisher : World Scientific
Page : 364 pages
File Size : 49,9 Mb
Release : 2003-04-02
Category : Technology & Engineering
ISBN : 9789814486439

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Compound Semiconductor Integrated Circuits by Tho T Vu Pdf

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji)The Transforming MMIC (E J Martinez)Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.)Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.)Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford)Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.)Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston)and other papers Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits. Keywords:High Speed Electronics and Systems;Compound Semiconductor Integrated Circuits;Wireline Fiber-Optic Lightwave Transmissions;Commercial and Military Applications;Digital Technologies

III–V Compound Semiconductors

Tingkai Li,Michael Mastro,Armin Dadgar

Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 603 pages
File Size : 46,5 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236

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III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII)

A. G. Baca

Author : A. G. Baca
Publisher : The Electrochemical Society
Page : 230 pages
File Size : 54,7 Mb
Release : 2000
Category : Technology & Engineering
ISBN : 1566772850

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High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) by A. G. Baca Pdf

The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR

Compound Semiconductor Devices

III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

Compound Semiconductor Device Physics by Sandip Tiwari Pdf

Compound Semiconductor Materials and Devices by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou Pdf

Compound Semiconductors by Ferdinand Scholz Pdf

Compound Semiconductor Devices by Kenneth A. Jackson Pdf

Compound Semiconductor Device Modelling by Christopher M. Snowden,Robert E. Miles Pdf

Handbook of Compound Semiconductors by Paul H. Holloway,Gary E. McGuire Pdf

Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

Compound Semiconductors 2001 by Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi Pdf

Novel Compound Semiconductor Nanowires by Fumitaro Ishikawa,Irina Buyanova Pdf

Devices for Integrated Circuits by H. Craig Casey Pdf

Compound Semiconductors 2002 by Marc Ilegems,Gunter Weimann,Joachim Wagner Pdf

Compound Semiconductor Integrated Circuits by Tho T Vu Pdf

III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) by A. G. Baca Pdf

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