Formation Of Ferroelectricity In Hafnium Oxide Based Thin Films

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Formation of Ferroelectricity in Hafnium Oxide Based Thin Films

Tony Schenk
Formation of Ferroelectricity in Hafnium Oxide Based Thin Films Book PDF

Author : Tony Schenk
Publisher : BoD – Books on Demand
Page : 194 pages
File Size : 47,8 Mb
Release : 2017-03-15
Category : Technology & Engineering
ISBN : 9783743127296

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Formation of Ferroelectricity in Hafnium Oxide Based Thin Films by Tony Schenk Pdf

In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.

Ferroelectricity in Doped Hafnium Oxide

Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Ferroelectricity in Doped Hafnium Oxide Book PDF

Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Page : 570 pages
File Size : 47,9 Mb
Release : 2019-03-27
Category : Technology & Engineering
ISBN : 9780081024317

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Ferroelectricity in Doped Hafnium Oxide by Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo Pdf

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials

Michael Hoffmann
Negative Capacitance in Ferroelectric Materials Book PDF

Author : Michael Hoffmann
Publisher : BoD – Books on Demand
Page : 172 pages
File Size : 45,7 Mb
Release : 2020-09-15
Category : Technology & Engineering
ISBN : 9783751999366

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Negative Capacitance in Ferroelectric Materials by Michael Hoffmann Pdf

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Principles and Applications of Ferroelectrics and Related Materials

M. E. Lines,A. M. Glass
Principles and Applications of Ferroelectrics and Related Materials Book PDF

Author : M. E. Lines,A. M. Glass
Publisher : Oxford University Press
Page : 700 pages
File Size : 47,6 Mb
Release : 2001-02
Category : Science
ISBN : 019850778X

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Principles and Applications of Ferroelectrics and Related Materials by M. E. Lines,A. M. Glass Pdf

This is a standard work on ferroelectrics.

Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors

Evelyn Tina Breyer
Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors Book PDF

Author : Evelyn Tina Breyer
Publisher : BoD – Books on Demand
Page : 216 pages
File Size : 49,5 Mb
Release : 2022-02-08
Category : Technology & Engineering
ISBN : 9783755708520

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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by Evelyn Tina Breyer Pdf

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Metal Oxides for Non-volatile Memory

Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Metal Oxides for Non volatile Memory Book PDF

Author : Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Publisher : Elsevier
Page : 534 pages
File Size : 42,5 Mb
Release : 2022-03-01
Category : Technology & Engineering
ISBN : 9780128146309

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Metal Oxides for Non-volatile Memory by Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen Pdf

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Memristive Devices for Brain-Inspired Computing

Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
Memristive Devices for Brain Inspired Computing Book PDF

Author : Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
Publisher : Woodhead Publishing
Page : 569 pages
File Size : 51,5 Mb
Release : 2020-06-12
Category : Technology & Engineering
ISBN : 9780081027875

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Memristive Devices for Brain-Inspired Computing by Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran Pdf

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Pulsed Laser Deposition of Thin Films

Robert Eason
Pulsed Laser Deposition of Thin Films Book PDF

Author : Robert Eason
Publisher : John Wiley & Sons
Page : 754 pages
File Size : 50,9 Mb
Release : 2007-12-14
Category : Science
ISBN : 9780470052112

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Pulsed Laser Deposition of Thin Films by Robert Eason Pdf

Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.

Advanced Ultra Low-Power Semiconductor Devices

Shubham Tayal,Abhishek Kumar Upadhyay,Shiromani Balmukund Rahi,Young Suh Song
Advanced Ultra Low Power Semiconductor Devices Book PDF

Author : Shubham Tayal,Abhishek Kumar Upadhyay,Shiromani Balmukund Rahi,Young Suh Song
Publisher : John Wiley & Sons
Page : 325 pages
File Size : 51,5 Mb
Release : 2023-11-30
Category : Technology & Engineering
ISBN : 9781394166411

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Advanced Ultra Low-Power Semiconductor Devices by Shubham Tayal,Abhishek Kumar Upadhyay,Shiromani Balmukund Rahi,Young Suh Song Pdf

ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.

Nanocrystals in Nonvolatile Memory

Writam Banerjee
Nanocrystals in Nonvolatile Memory Book PDF

Author : Writam Banerjee
Publisher : CRC Press
Page : 683 pages
File Size : 52,6 Mb
Release : 2024-08-09
Category : Technology & Engineering
ISBN : 9781040119105

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Nanocrystals in Nonvolatile Memory by Writam Banerjee Pdf

In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.

Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications

Tim S. Böscke
Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications Book PDF

Author : Tim S. Böscke
Publisher : Cuvillier Verlag
Page : 180 pages
File Size : 44,5 Mb
Release : 2010-05-31
Category : Science
ISBN : 9783736933460

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Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications by Tim S. Böscke Pdf

This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t’ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node. HfO2, in contrast, formed a mixture of monoclinic and tetragonal phase which led to the formation of mechanical defects (microcracks). Addition of SiO2 allowed manipulating the phase composition of HfO2. When up to 7 mol% SiO2 was added, increased stabilization of the metastable t' phase with a dielectric constant of 34-36 was observed. It could be shown that the stabilization is due to a combination of a surface energy effect and solved SiO2 in the HfO2 lattice. Above 11 mol% SiO2 segregated from HfO2 and a tetragonal phase with higher c/a splitting and lower dielectric constant was stabilized instead. It was discovered that the behavior of HfSiO was fundamentally altered if it was crystallized under mechanical confinement in presence of a top electrode. Besides a significant increase in dielectric constant, the material exhibited ferroelectric and antiferroelectric polarization hysteresis, a characteristic not previously reported for HfO2 or ZrO2. This behavior originated from the formation of a new orthorhombic crystal phase. Utilizing the increased permittivity of the antiferroelectic phase, it was possible to demonstrate low EOT, highly temperature stable, MIM capacitors with potential application in sub 50 nm deep trench-DRAM generations. Novel ferroelectric HfSiO was used to fabricate ferroelectric field effect transistors which allowed long term nonvolatile data storage. The electrical characteristics of the devices meet or exceed that of the best published literature results. Full compatibility to silicon semiconductor technology with a gate stack thickness down to 5 nm was demonstrated for the first time, suggesting that HfSiO based FEFETs can potentially be scaled to below the 30 nm node. This goal could not be achieved with previously known materials.

Epitaxy

Miao Zhong
Epitaxy Book PDF

Author : Miao Zhong
Publisher : BoD – Books on Demand
Page : 246 pages
File Size : 50,6 Mb
Release : 2018-03-07
Category : Technology & Engineering
ISBN : 9789535138891

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Epitaxy by Miao Zhong Pdf

The edited volume "Epitaxy" is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of materials science. The book comprises single chapters authored by various researchers and edited by an expert active in this research area. All chapters are complete in themselves but are united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors in the field of materials science as well as opening new possible research paths for further developments.

Ferroelectric-Gate Field Effect Transistor Memories

Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Ferroelectric Gate Field Effect Transistor Memories Book PDF

Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publisher : Springer Nature
Page : 421 pages
File Size : 53,9 Mb
Release : 2020-03-23
Category : Technology & Engineering
ISBN : 9789811512124

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Ferroelectric-Gate Field Effect Transistor Memories by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon Pdf

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Gate Stack Engineering for Emerging Polarization based Non-volatile Memories

Milan Pesic
Gate Stack Engineering for Emerging Polarization based Non volatile Memories Book PDF

Author : Milan Pesic
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 55,7 Mb
Release : 2017-07-14
Category : Technology & Engineering
ISBN : 9783744867887

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Gate Stack Engineering for Emerging Polarization based Non-volatile Memories by Milan Pesic Pdf

The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.

Ferroelectric Thin Films

Masanori Okuyama,Yoshihiro Ishibashi
Ferroelectric Thin Films Book PDF

Author : Masanori Okuyama,Yoshihiro Ishibashi
Publisher : Springer Science & Business Media
Page : 272 pages
File Size : 42,6 Mb
Release : 2005-02-22
Category : Computers
ISBN : 3540241639

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Ferroelectric Thin Films by Masanori Okuyama,Yoshihiro Ishibashi Pdf

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.