High Speed Compound Semiconductor Devices For Wireless Applications And State Of The Art Program On Compound Semiconductors Xxxiii
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High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) by A. G. Baca Pdf
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52) by M. E. Overberg Pdf
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
High-speed Integrated Circuit Technology by Mark J. W. Rodwell Pdf
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) by IEEE Staff Pdf
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano scale CMOS, and graphene semiconductor technologies and their application to RF, mm wave, high speed, and energy conversion circuits and systems Specific technical areas of interest include Innovative device concepts in emerging technologies, Nitrides, InP, III V on Si, Ge on Si, Graphene, Analog, RF, mixed signal, mm wave, THz circuit blocks and ICs in III V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High speed digital systems, Fiber optics and photonics, Device and circuit modeling EM and EDA tools, Thermal simulation and advanced packaging of high power devices and ICs, Device and IC manufacturing processes
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
GaAs High-Speed Devices by C. Y. Chang,Francis Kai Pdf
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
2016 Compound Semiconductor Week (CSW) Includes 28th International Conference on Indium Phosphide and Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS) by IEEE Staff Pdf
CSW 2016 will be the premier forum of 2016 for science, technology and applications of compound semiconductors, addressing the physics, science, and applications of III V and II VI compound semiconductors, SiGe, SiC and related alloys, as well as new materials such as complex oxides and two dimensional materials Papers are solicited on all compound semiconductor related topics including (IPRM) Epitaxy, novel materials, and nanostructures, Optoelectronics devices and related technologies, Electron devices and related technologies, (ISCS) Growth and related technologies, Photonic devices, Nanocharacterization and nanostructures, Oxide semiconductors, Organic semiconductors and flexible materials, High frequency and high power devices, Physics, spintronics, and novel device concepts, GaN and related semiconductore, Nanocarbon and novel 2D materials
2016 13th IEEE International Conference on Solid State and Integrated Circuit Technology (ICSICT) by IEEE Staff Pdf
Process & Device Technologies 1 Channel Engineering 2 High k Metal gate Technology 3 Advanced Source Drain Technology 4 Interconnect Technology 5 Advanced 3D Integration 6 Novel Process Technologies 7 Ultra Thin Body Transistors and Device Variability 8 Advanced High k Metal Gate SoC and High Performance CMOS Platforms 9 CMOS Performance Enhancing and Novel Devices 10 Advanced FinFETs and Nanowire FETs 11 CNT, MTJ Devices and Nanowire Photodiodes 12 Low Power and Steep Slope Switching Devices 13 Graphene Devices 14 Advanced Technologies for Ge MOSFETs 15 Organic semiconductor devices and technologies 16 Compound semiconductor devices and Technology 17 Ultra High Speed Transistors, HEMT HBT etc 18 Advanced Power Devices and Reliability 19 Flash Memory 20 IT Magnetic RAM 21 Resistive RAMs 22 Phase Change Memory 23 3 Dimensional Memory 24 MEMS Technology 25 Thin Film Transistors 26 Biosensors 27 PV and Energy Harvesting 28 Front End of Line (FEOL) R
2018 14th IEEE International Conference on Solid State and Integrated Circuit Technology (ICSICT) by IEEE Staff Pdf
Process & Device Technologies 1 Channel Engineering 2 High k Metal gate Technology 3 Advanced Source Drain Technology 4 Interconnect Technology 5 Advanced 3D Integration 6 Novel Process Technologies 7 Ultra Thin Body Transistors and Device Variability 8 Advanced High k Metal Gate SoC and High Performance CMOS Platforms 9 CMOS Performance Enhancing and Novel Devices 10 Advanced FinFETs and Nanowire FETs 11 CNT, MTJ Devices and Nanowire Photodiodes 12 Low Power and Steep Slope Switching Devices 13 Graphene Devices 14 Advanced Technologies for Ge MOSFETs 15 Organic semiconductor devices and technologies 16 Compound semiconductor devices and Technology 17 Ultra High Speed Transistors, HEMT HBT etc 18 Advanced Power Devices and Reliability 19 Flash Memory 20 IT Magnetic RAM 21 Resistive RAM
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) by IEEE Staff Pdf
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano scale CMOS, and graphene semiconductor technologies and their application to RF, mm wave, high speed, and energy conversion circuits and systems Specific technical areas of interest include Innovative device concepts in emerging technologies, Nitrides, InP, III V on Si, Ge on Si, Graphene, Analog, RF, mixed signal, mm wave, THz circuit blocks and ICs in III V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High speed digital systems, Fiber optics and photonics, Device and circuit modeling EM and EDA tools, Thermal simulation and advanced packaging of high power devices and ICs, Device and IC manufacturing processes
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) by IEEE Staff Pdf
From its beginning in 1978 as the GaAs IC symposium, the IEEE Compound Semiconductor IC Symposium (CSICS) has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits and devices, embracing GaAs, InP, GaN, SiGe, and CMOS technology Coverage includes all aspects of the technology, from materials, device fabrication, IC design, testing, and system applications CSICS provides the ideal forum to present the latest results in high speed digital, analog, microwave, millimeter wave, THz, mixed mode, and optoelectronic integrated circuits First time papers addressing the utilization and application of InP, GaAs, GaN, Silicon, Germanium, SiGe, and other compound
12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014 by Anonim Pdf
Annotation, Process & Device Technologies 1 Channel Engineering 2 High k Metal gate Technology 3 Advanced Source Drain Technology 4 Interconnect Technology 5 Advanced 3D Integration 6 Novel Process Technologies 7 Ultra Thin Body Transistors and Device Variability 8 Advanced High k Metal Gate SoC and High Performance CMOS Platforms 9 CMOS Performance Enhancing and Novel Devices 10 Advanced FinFETs and Nanowire FETs 11 CNT, MTJ Devices and Nanowire Photodiodes 12 Low Power and Steep Slope Switching Devices 13 Graphene Devices 14 Advanced Technologies for Ge MOSFETs 15 Organic semiconductor devices and technologies 16 Compound semiconductor devices and Technology 17 Ultra High Speed Transistors, HEMT HBT etc 18 Advanced Power Devices and Reliability 19 Flash Memory 20 IT Magnetic RAM 21 Resistive RAMs 22 Phase Change Memory 23 3 Dimensional Memory 24 MEMS Technology 25 Thin Film Transistors 26 Biosensors 27 PV and Energy Harvesting 28 Front End of Line (FEOL) R
