Latchup

Author : R.R. Troutman
Publisher : Springer Science & Business Media
Page : 255 pages
File Size : 53,5 Mb
Release : 2013-03-14
Category : Technology & Engineering
ISBN : 9781475718874

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Latchup in CMOS Technology by R.R. Troutman Pdf

Why a book on Iatchup? Latchup has been, and continues to be, a potentially serious CMOS reliability concern. This concern is becoming more widespread with the ascendency of CMOS as the dominant VLSI technology, particularly as parasitic bipolar characteristics continue to improve at ever smaller dimensions on silicon wafers with ever lower defect densities. Although many successful parts have been marketed, latchup solutions have often been ad hoc. Although latchup avoidance techniques have been previously itemized, there has been little quantitative evaluation of prior latchup fixes. What is needed is a more general, more systematic treatment of the latchup problem. Because of the wide variety of CMOS technologies and the long term interest in latchup, some overall guiding principles are needed. Appreciating the variety of possible triggering mechanisms is key to a real understanding of latchup. This work reviews the origin of each and its effect on the parasitic structure. Each triggering mechanism is classified according to a new taxonomy.

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 472 pages
File Size : 51,7 Mb
Release : 2008-04-15
Category : Technology & Engineering
ISBN : 047051616X

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Latchup by Steven H. Voldman Pdf

Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Author : Ming-Dou Ker,Sheng-Fu Hsu
Publisher : John Wiley & Sons
Page : 265 pages
File Size : 47,9 Mb
Release : 2009-07-23
Category : Technology & Engineering
ISBN : 9780470824085

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Transient-Induced Latchup in CMOS Integrated Circuits by Ming-Dou Ker,Sheng-Fu Hsu Pdf

The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 1172 pages
File Size : 54,5 Mb
Release : 2021-03-25
Category : Technology & Engineering
ISBN : 9781119233138

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The ESD Handbook by Steven H. Voldman Pdf

A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

Author : Stephen J. Gaul,Nicolaas van Vonno,Steven H. Voldman,Wesley H. Morris
Publisher : John Wiley & Sons
Page : 388 pages
File Size : 43,6 Mb
Release : 2019-12-31
Category : Technology & Engineering
ISBN : 9781119966340

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Integrated Circuit Design for Radiation Environments by Stephen J. Gaul,Nicolaas van Vonno,Steven H. Voldman,Wesley H. Morris Pdf

A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 420 pages
File Size : 55,5 Mb
Release : 2005-12-13
Category : Technology & Engineering
ISBN : 9780470012901

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ESD by Steven H. Voldman Pdf

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Author : Hans Paul Zappe
Publisher : Unknown
Page : 498 pages
File Size : 40,9 Mb
Release : 1989
Category : Electronic
ISBN : UCAL:$C73258

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Advanced Techniques for CMOS Performance Enhancement and Latchup Control by Hans Paul Zappe Pdf

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 323 pages
File Size : 55,7 Mb
Release : 2016-12-19
Category : Technology & Engineering
ISBN : 9780470511916

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ESD Testing by Steven H. Voldman Pdf

With the evolution of semiconductor technology and global diversification of the semiconductor business, testing of semiconductor devices to systems for electrostatic discharge (ESD) and electrical overstress (EOS) has increased in importance. ESD Testing: From Components to Systems updates the reader in the new tests, test models, and techniques in the characterization of semiconductor components for ESD, EOS, and latchup. Key features: Provides understanding and knowledge of ESD models and specifications including human body model (HBM), machine model (MM), charged device model (CDM), charged board model (CBM), cable discharge events (CDE), human metal model (HMM), IEC 61000-4-2 and IEC 61000-4-5. Discusses new testing methodologies such as transmission line pulse (TLP), to very fast transmission line pulse (VF-TLP), and future methods of long pulse TLP, to ultra-fast TLP (UF-TLP). Describes both conventional testing and new testing techniques for both chip and system level evaluation. Addresses EOS testing, electromagnetic compatibility (EMC) scanning, to current reconstruction methods. Discusses latchup characterization and testing methodologies for evaluation of semiconductor technology to product testing. ESD Testing: From Components to Systems is part of the authors’ series of books on electrostatic discharge (ESD) protection; this book will be an invaluable reference for the professional semiconductor chip and system-level ESD and EOS test engineer. Semiconductor device and process development, circuit designers, quality, reliability and failure analysis engineers will also find it an essential reference. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, semiconductor testing and experimental work.

Author : A. Christou
Publisher : RIAC
Page : 392 pages
File Size : 43,5 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9780965266949

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Reliability of High Temperature Electronics by A. Christou Pdf

Author : Mayrant Simons,R. P. Donovan
Publisher : Unknown
Page : 176 pages
File Size : 48,6 Mb
Release : 1969
Category : Integrated circuits
ISBN : UOM:39015095090356

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Latchup in Dielectrically Isolated Integrated Circuits by Mayrant Simons,R. P. Donovan Pdf

Author : Michael Nastasi,James W. Mayer
Publisher : Springer Science & Business Media
Page : 271 pages
File Size : 46,8 Mb
Release : 2007-05-16
Category : Science
ISBN : 9783540452980

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Ion Implantation and Synthesis of Materials by Michael Nastasi,James W. Mayer Pdf

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Author : Anupama B. Kaul
Publisher : CRC Press
Page : 467 pages
File Size : 40,6 Mb
Release : 2017-12-19
Category : Science
ISBN : 9781351832380

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Microelectronics to Nanoelectronics by Anupama B. Kaul Pdf

Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.

Author : G.C. Messenger,Milton Ash
Publisher : Springer Science & Business Media
Page : 367 pages
File Size : 52,6 Mb
Release : 2013-11-27
Category : Technology & Engineering
ISBN : 9781461560432

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Single Event Phenomena by G.C. Messenger,Milton Ash Pdf

This monograph is written for neophytes, students, and practitioners to aid in their understanding of single event phenomena. It attempts to collect the highlights as well as many of the more detailed aspects of this field into an entity that portrays the theoretical as well as the practical applications of this subject. Those who claim that "theory" is not for them can skip over the earlier chapters dealing with the fundamental and theoretical portions and find what they need in the way of hands-on guidelines and pertinent formulas in the later chapters. Perhaps, after a time they will return to peruse the earlier chapters for a more complete rendition and appreciation of the subject matter. It is felt that the reader should have some acquaintance with the electronics of semiconductors and devices, some broad atomic physics introduction, as well as a respectable level of mathematics through calculus, including simple differential equations. A large part of the preceding can be obtained informally, through job experience, self-study, evening classes, as well as from a formal college curriculum.

Author : Michael Pecht,Riko Radojcic,Gopal Rao
Publisher : CRC Press
Page : 224 pages
File Size : 53,9 Mb
Release : 2017-11-22
Category : Technology & Engineering
ISBN : 9781351443579

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Guidebook for Managing Silicon Chip Reliability by Michael Pecht,Riko Radojcic,Gopal Rao Pdf

Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.

Author : Antonio R. Alvarez
Publisher : Springer Science & Business Media
Page : 412 pages
File Size : 55,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461532187

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BiCMOS Technology and Applications by Antonio R. Alvarez Pdf

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.