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Author : D. J. Dumin
Publisher : World Scientific
Page : 292 pages
File Size : 42,7 Mb
Release : 2002
Category : Technology & Engineering
ISBN : 9810248423
Presents in summary the state of our knowledge of oxide reliability.
Author : David J Dumin
Publisher : World Scientific
Page : 281 pages
File Size : 49,6 Mb
Release : 2002-01-18
Category : Technology & Engineering
ISBN : 9789814489454
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Author : Anonim
Publisher : Unknown
Page : 1116 pages
File Size : 48,6 Mb
Release : 1988
Category : Naval research
ISBN : STANFORD:36105113704303
Author : Nigel Brandon
Publisher : Academic Press
Page : 234 pages
File Size : 43,5 Mb
Release : 2017-05-23
Category : Technology & Engineering
ISBN : 9780128097243
Solid Oxide Fuel Cell Lifetime and Reliability: Critical Challenges in Fuel Cells presents in one volume the most recent research that aims at solving key issues for the deployment of SOFC at a commercial scale and for a wider range of applications. To achieve that, authors from different regions and backgrounds address topics such as electrolytes, contaminants, redox cycling, gas-tight seals, and electrode microstructure. Lifetime issues for particular elements of the fuel cells, like cathodes, interconnects, and fuel processors, are covered as well as new materials. They also examine the balance of SOFC plants, correlations between structure and electrochemical performance, methods for analysis of performance and degradation assessment, and computational and statistical approaches to quantify degradation. For its holistic approach, this book can be used both as an introduction to these issues and a reference resource for all involved in research and application of solid oxide fuel cells, especially those developing understanding in industrial applications of the lifetime issues. This includes researchers in academia and industrial R&D, graduate students and professionals in energy engineering, electrochemistry, and materials sciences for energy applications. It might also be of particular interest to analysts who are looking into integrating SOFCs into energy systems. Brings together in a single volume leading research and expert thinking around the broad topic of SOFC lifetime and durability Explores issues that affect solid oxide fuel cells elements, materials, and systems with a holistic approach Provides a practical reference for overcoming some of the common failure mechanisms of SOFCs Features coverage of integrating SOFCs into energy systems
Author : Antonio R. Alvarez
Publisher : Springer Science & Business Media
Page : 412 pages
File Size : 53,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461532187
BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author : Andrey V. Mezhiba,Eby G. Friedman
Publisher : Springer Science & Business Media
Page : 308 pages
File Size : 40,5 Mb
Release : 2004
Category : Technology & Engineering
ISBN : 1402075340
Distributing power in high speed, high complexity integrated circuits has become a challenging task as power levels exceeding tens of watts have become commonplace while the power supply is plunging toward one volt. This book is dedicated to this important subject. The primary purpose of this monograph is to provide insight and intuition into the behavior and design of power distribution systems for high speed, high complexity integrated circuits.
Author : An Chen
Publisher : John Wiley & Sons
Page : 372 pages
File Size : 40,5 Mb
Release : 2022-09-27
Category : Technology & Engineering
ISBN : 9781119869603
Advances in Semiconductor Technologies Discover the broad sweep of semiconductor technologies in this uniquely curated resource Semiconductor technologies and innovations have been the backbone of numerous different fields: electronics, online commerce, the information and communication industry, and the defense industry. For over fifty years, silicon technology and CMOS scaling have been the central focus and primary driver of innovation in the semiconductor industry. Traditional CMOS scaling has approached some fundamental limits, and as a result, the pace of scientific research and discovery for novel semiconductor technologies is increasing with a focus on novel materials, devices, designs, architectures, and computer paradigms. In particular, new computing paradigms and systems—such as quantum computing, artificial intelligence, and Internet of Things—have the potential to unlock unprecedented power and application space. Advances in Semiconductor Technologies provides a comprehensive overview of selected semiconductor technologies and the most up-to-date research topics, looking in particular at mainstream developments in current industry research and development, from emerging materials and devices, to new computing paradigms and applications. This full-coverage volume gives the reader valuable insights into state-of-the-art advances currently being fabricated, a wide range of novel applications currently under investigation, and a glance into the future with emerging technologies in development. Advances in Semiconductor Technologies readers will also find: A comprehensive approach that ensures a thorough understanding of state-of-the-art technologies currently being fabricated Treatments on all aspects of semiconductor technologies, including materials, devices, manufacturing, modeling, design, architecture, and applications Articles written by an impressive team of international academics and industry insiders that provide unique insights into a wide range of topics Advances in Semiconductor Technologies is a useful, time-saving reference for electrical engineers working in industry and research, who are looking to stay abreast of rapidly advancing developments in semiconductor electronics, as well as academics in the field and government policy advisors.
Author : Ilia B. Frenkel,Alex Karagrigoriou,Anatoly Lisnianski,Andre Kleyner
Publisher : John Wiley & Sons
Page : 449 pages
File Size : 42,9 Mb
Release : 2013-08-22
Category : Technology & Engineering
ISBN : 9781118701898
This complete resource on the theory and applications of reliability engineering, probabilistic models and risk analysis consolidates all the latest research, presenting the most up-to-date developments in this field. With comprehensive coverage of the theoretical and practical issues of both classic and modern topics, it also provides a unique commemoration to the centennial of the birth of Boris Gnedenko, one of the most prominent reliability scientists of the twentieth century. Key features include: expert treatment of probabilistic models and statistical inference from leading scientists, researchers and practitioners in their respective reliability fields detailed coverage of multi-state system reliability, maintenance models, statistical inference in reliability, systemability, physics of failures and reliability demonstration many examples and engineering case studies to illustrate the theoretical results and their practical applications in industry Applied Reliability Engineering and Risk Analysis is one of the first works to treat the important areas of degradation analysis, multi-state system reliability, networks and large-scale systems in one comprehensive volume. It is an essential reference for engineers and scientists involved in reliability analysis, applied probability and statistics, reliability engineering and maintenance, logistics, and quality control. It is also a useful resource for graduate students specialising in reliability analysis and applied probability and statistics. Dedicated to the Centennial of the birth of Boris Gnedenko, renowned Russian mathematician and reliability theorist
Author : Howard R. Huff,László Fábry,Seigo Kishino
Publisher : The Electrochemical Society
Page : 650 pages
File Size : 44,8 Mb
Release : 2002
Category : Semiconductors
ISBN : 1566773741
Author : Anonim
Publisher : Unknown
Page : 488 pages
File Size : 54,7 Mb
Release : 1997
Category : Microelectronics
ISBN : UOM:39015035292666
Author : T. O. Herndon
Publisher : Unknown
Page : 520 pages
File Size : 51,9 Mb
Release : 1993
Category : Dielectrics
ISBN : UCAL:$B247019
Author : Fan Ren,J. C. Zolper
Publisher : World Scientific
Page : 526 pages
File Size : 40,6 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 9789812382467
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Author : Juin J. Liou
Publisher : CRC Press
Page : 304 pages
File Size : 42,9 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781482255898
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
Author : J. Joseph Clement
Publisher : Unknown
Page : 488 pages
File Size : 49,5 Mb
Release : 1997-10-20
Category : Technology & Engineering
ISBN : UCSD:31822025650011
The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
Page : 250 pages
File Size : 50,9 Mb
Release : 2018-09-25
Category : Technology & Engineering
ISBN : 9781945291845
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
