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Author : N. B. Urli,James W. Corbett
Publisher : Institute of Physics Publishing (GB)
Page : 556 pages
File Size : 50,6 Mb
Release : 1977
Category : Science
ISBN : UOM:39015001337131
Author : N. B. Urli,James W. Corbett
Publisher : Unknown
Page : 0 pages
File Size : 54,7 Mb
Release : 1977
Category : Electronic
ISBN : OCLC:251416717
Author : Krzysztof Iniewski
Publisher : CRC Press
Page : 442 pages
File Size : 51,7 Mb
Release : 2018-09-03
Category : Technology & Engineering
ISBN : 9781351833752
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author : Anonim
Publisher : Unknown
Page : 46 pages
File Size : 49,8 Mb
Release : 1967
Category : Electronic
ISBN : UOM:39015087108323
Author : C. Claeys,Eddy Simoen
Publisher : Springer Science & Business Media
Page : 440 pages
File Size : 42,7 Mb
Release : 2002-08-21
Category : Business & Economics
ISBN : 3540433937
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author : Victor I. Fistul
Publisher : CRC Press
Page : 448 pages
File Size : 43,9 Mb
Release : 2004-01-27
Category : Science
ISBN : 9780203299258
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 47,9 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461326953
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : Sokrates T. Pantelides
Publisher : CRC Press
Page : 952 pages
File Size : 55,5 Mb
Release : 1992-11-30
Category : Science
ISBN : 2881245625
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Author : V. S. Vavilov
Publisher : Unknown
Page : 0 pages
File Size : 43,6 Mb
Release : 1973
Category : Electronic
ISBN : OCLC:1411891697
Author : J. H. Albany
Publisher : CRC Press
Page : 604 pages
File Size : 40,5 Mb
Release : 1979
Category : Art
ISBN : UCAL:B4428167
Author : Ryukiti R. Hasiguti
Publisher : Institute of Physics Publishing (GB)
Page : 596 pages
File Size : 41,9 Mb
Release : 1981
Category : Technology & Engineering
ISBN : UVA:X001324693
Author : Anonim
Publisher : Unknown
Page : 1740 pages
File Size : 48,5 Mb
Release : 1981
Category : Power resources
ISBN : CUB:U183019899733
Author : Los Alamos Scientific Laboratory
Publisher : Unknown
Page : 80 pages
File Size : 50,7 Mb
Release : 1961
Category : Radiation
ISBN : UOM:39015086498543
Author : Otfried Madelung
Publisher : Springer Science & Business Media
Page : 170 pages
File Size : 43,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642456817
The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.
Author : Anonim
Publisher : ASTM International
Page : 248 pages
File Size : 51,6 Mb
Release : 1965
Category : Electronic apparatus and appliances
ISBN : 8210379456XXX
