Silicon Non Volatile Memories

Author : Barbara de Salvo
Publisher : John Wiley & Sons
Page : 222 pages
File Size : 54,8 Mb
Release : 2013-05-10
Category : Technology & Engineering
ISBN : 9781118617809

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Silicon Non-Volatile Memories by Barbara de Salvo Pdf

Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

Author : Panagiotis Dimitrakis
Publisher : Springer
Page : 211 pages
File Size : 52,5 Mb
Release : 2017-02-14
Category : Technology & Engineering
ISBN : 9783319487052

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Charge-Trapping Non-Volatile Memories by Panagiotis Dimitrakis Pdf

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

Author : Giovanni Campardo,Rino Micheloni,David Novosel
Publisher : Springer Science & Business Media
Page : 616 pages
File Size : 45,7 Mb
Release : 2005-01-18
Category : Computers
ISBN : 354020198X

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VLSI-Design of Non-Volatile Memories by Giovanni Campardo,Rino Micheloni,David Novosel Pdf

VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.

Author : Pierre-Camille Lacaze,Jean-Claude Lacroix
Publisher : John Wiley & Sons
Page : 128 pages
File Size : 49,9 Mb
Release : 2014-12-02
Category : Technology & Engineering
ISBN : 9781118790120

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Non-volatile Memories by Pierre-Camille Lacaze,Jean-Claude Lacroix Pdf

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Author : Hsu Charles Ching-hsiang,Lin Yuan-tai
Publisher : World Scientific
Page : 316 pages
File Size : 49,7 Mb
Release : 2014-03-18
Category : Technology & Engineering
ISBN : 9789814460927

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Logic Non-volatile Memory: The Nvm Solutions For Ememory by Hsu Charles Ching-hsiang,Lin Yuan-tai Pdf

Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

Author : Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Publisher : Elsevier
Page : 534 pages
File Size : 40,7 Mb
Release : 2022-03-01
Category : Technology & Engineering
ISBN : 9780128146309

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Metal Oxides for Non-volatile Memory by Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen Pdf

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Author : Tseung-Yuen Tseng,S. M. Sze
Publisher : Unknown
Page : 128 pages
File Size : 43,9 Mb
Release : 2012
Category : Flash memories (Computers)
ISBN : 1588832503

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Nonvolatile Memories by Tseung-Yuen Tseng,S. M. Sze Pdf

Author : Munir H. Nayfeh
Publisher : Elsevier
Page : 602 pages
File Size : 53,9 Mb
Release : 2018-06-29
Category : Science
ISBN : 9780323480581

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Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines by Munir H. Nayfeh Pdf

Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers

Author : Arup Bhattacharyya
Publisher : CRC Press
Page : 512 pages
File Size : 43,6 Mb
Release : 2017-07-06
Category : Technology & Engineering
ISBN : 9781351798327

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Silicon Based Unified Memory Devices and Technology by Arup Bhattacharyya Pdf

The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.

Author : Anonim
Publisher : ScholarlyEditions
Page : 810 pages
File Size : 47,8 Mb
Release : 2013-06-21
Category : Science
ISBN : 9781481692380

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Silicon Compounds—Advances in Research and Application: 2013 Edition by Anonim Pdf

Silicon Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Silanes. The editors have built Silicon Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Silanes in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Silicon Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Author : Vikram J. Kapoor,Kevin T. Hankins
Publisher : Unknown
Page : 570 pages
File Size : 45,7 Mb
Release : 1987
Category : Electric and insulation
ISBN : PSU:000018967890

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Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films by Vikram J. Kapoor,Kevin T. Hankins Pdf

Author : Igor Stievano
Publisher : BoD – Books on Demand
Page : 278 pages
File Size : 48,8 Mb
Release : 2011-09-06
Category : Computers
ISBN : 9789533072722

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Flash Memories by Igor Stievano Pdf

Flash memories and memory systems are key resources for the development of electronic products implementing converging technologies or exploiting solid-state memory disks. This book illustrates state-of-the-art technologies and research studies on Flash memories. Topics in modeling, design, programming, and materials for memories are covered along with real application examples.

Author : Milan Pesic
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 52,7 Mb
Release : 2017-07-14
Category : Technology & Engineering
ISBN : 9783744867887

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Gate Stack Engineering for Emerging Polarization based Non-volatile Memories by Milan Pesic Pdf

The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.

Author : Nobuyoshi Koshida
Publisher : Springer Science & Business Media
Page : 350 pages
File Size : 51,8 Mb
Release : 2008-12-11
Category : Technology & Engineering
ISBN : 9780387786896

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Device Applications of Silicon Nanocrystals and Nanostructures by Nobuyoshi Koshida Pdf

Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.

Author : Charles Ching-Hsiang Hsu,Yuan-Tai Lin,Evans Ching-Sung Yang
Publisher : World Scientific
Page : 319 pages
File Size : 48,8 Mb
Release : 2014
Category : Technology & Engineering
ISBN : 9789814460910

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Logic Non-volatile Memory by Charles Ching-Hsiang Hsu,Yuan-Tai Lin,Evans Ching-Sung Yang Pdf

Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance? This book is written to help you. It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book. This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits. All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.