Vertical Field Effect Transistors Based On 3d Gan Nanowire Arrays

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Emerging Devices for Low-Power and High-Performance Nanosystems

Author : Simon Deleonibus
Publisher : CRC Press
Page : 267 pages
File Size : 44,8 Mb
Release : 2018-12-13
Category : Science
ISBN : 9780429858611

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Emerging Devices for Low-Power and High-Performance Nanosystems by Simon Deleonibus Pdf

The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.

Nanowire Field Effect Transistors: Principles and Applications

Author : Dae Mann Kim,Yoon-Ha Jeong
Publisher : Springer Science & Business Media
Page : 292 pages
File Size : 44,6 Mb
Release : 2013-10-23
Category : Technology & Engineering
ISBN : 9781461481249

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Nanowire Field Effect Transistors: Principles and Applications by Dae Mann Kim,Yoon-Ha Jeong Pdf

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Synthesis and Characterization of Piezotronic Materials for Application in Strain/Stress Sensing

Author : Ren Zhu,Rusen Yang
Publisher : Springer
Page : 70 pages
File Size : 55,9 Mb
Release : 2018-02-13
Category : Technology & Engineering
ISBN : 9783319700380

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Synthesis and Characterization of Piezotronic Materials for Application in Strain/Stress Sensing by Ren Zhu,Rusen Yang Pdf

This book explores the new materials and the resultant new field of piezotronics. The growth and alignment of the zinc oxide nanostructures are discussed in detail because of its wide adoption in this field and its significance in optics, health, and sensing applications. The characterization of the piezotronic effect and how to distinguish it from other similar but, fundamentally different effects, like piezoresistive effect is also considered. The huge potential in the wearable and flexible devices, as well as organic materials, is further examined. The stain/stress sensing is introduced as an example of an application with piezotronic materials.

Ceramic Integration and Joining Technologies

Author : Mrityunjay Singh,Tatsuki Ohji,Rajiv Asthana,Sanjay Mathur
Publisher : John Wiley & Sons
Page : 830 pages
File Size : 52,6 Mb
Release : 2011-10-11
Category : Technology & Engineering
ISBN : 9780470391228

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Ceramic Integration and Joining Technologies by Mrityunjay Singh,Tatsuki Ohji,Rajiv Asthana,Sanjay Mathur Pdf

This book joins and integrates ceramics and ceramic-based materials in various sectors of technology. A major imperative is to extract scientific information on joining and integration response of real, as well as model, material systems currently in a developmental stage. This book envisions integration in its broadest sense as a fundamental enabling technology at multiple length scales that span the macro, millimeter, micrometer and nanometer ranges. Consequently, the book addresses integration issues in such diverse areas as space power and propulsion, thermoelectric power generation, solar energy, micro-electro-mechanical systems (MEMS), solid oxide fuel cells (SOFC), multi-chip modules, prosthetic devices, and implanted biosensors and stimulators. The engineering challenge of designing and manufacturing complex structural, functional, and smart components and devices for the above applications from smaller, geometrically simpler units requires innovative development of new integration technology and skillful adaptation of existing technology.

Gallium Nitride and Silicon Carbide Power Technologies 7

Author : M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai
Publisher : The Electrochemical Society
Page : 297 pages
File Size : 49,6 Mb
Release : 2024-07-01
Category : Electronic
ISBN : 9781607688242

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Gallium Nitride and Silicon Carbide Power Technologies 7 by M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai Pdf

Nanomedicine

Author : Anonim
Publisher : Elsevier
Page : 705 pages
File Size : 48,8 Mb
Release : 2012-10-19
Category : Technology & Engineering
ISBN : 9780857096449

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Nanomedicine by Anonim Pdf

Nanotechnology is at the forefront of advances in medicine. Nanomedicine: Technologies and applications provides an important review of this exciting technology and its growing range of applications. After an introduction to nanomedicine, part one discusses key materials and their properties, including nanocrystalline metals and alloys, nanoporous gold and hydroxyapatite coatings. Part two goes on to review nanomedicine for therapeutics and imaging, before nanomedicine for soft tissue engineering is discussed in part three, including organ regeneration, skin grafts, nanotubes and self-assembled nanomaterials. Finally, nanomedicine for bone and cartilage tissue engineering is the focus of part four, with electrically active biocomposites as smart scaffolds investigated, as is cartilage and bone tissue engineering, regeneration and replacement. With its distinguished editor and international team of expert contributors, Nanomedicine: Technologies and applications is an indispensable guide for all those involved in the research, development and application of this exciting technology, whilst providing a comprehensive introduction for students and academics interested in this field. Provides an important review of nanomedicine technology and its growing range of applications Discusses key nanomedicine materials and their properties, including nanocrystalline metals and alloys, nanoporous gold and hydroxyapatite coatings Reviews nanomedicine for therapeutics and imaging and nanomedicine for soft tissue engineering

3D Nanoelectronic Computer Architecture and Implementation

Author : David Crawley,K. Nikolic,M. Forshaw
Publisher : CRC Press
Page : 277 pages
File Size : 51,9 Mb
Release : 2020-01-15
Category : Computers
ISBN : 9780429525056

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3D Nanoelectronic Computer Architecture and Implementation by David Crawley,K. Nikolic,M. Forshaw Pdf

It is becoming increasingly clear that the two-dimensional layout of devices on computer chips hinders the development of high-performance computer systems. Three-dimensional structures will be needed to provide the performance required to implement computationally intensive tasks. 3-D Nanoelectronic Computer Architecture and Implementation reviews the state of the art in nanoelectronic device design and fabrication and discusses the architectural aspects of 3-D designs, including the possible use of molecular wiring and carbon nanotube interconnections. This is a valuable reference for those involved in the design and development of nanoelectronic devices and technology.

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Newnes
Page : 744 pages
File Size : 49,8 Mb
Release : 2012-12-31
Category : Technology & Engineering
ISBN : 9780123918598

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Molecular Beam Epitaxy by Mohamed Henini Pdf

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Chemical Abstracts

Author : Anonim
Publisher : Unknown
Page : 2634 pages
File Size : 54,5 Mb
Release : 2002
Category : Chemistry
ISBN : UOM:39015057321401

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Chemical Abstracts by Anonim Pdf

Piezotronics and Piezo-Phototronics

Author : Zhong Lin Wang
Publisher : Springer Science & Business Media
Page : 254 pages
File Size : 41,7 Mb
Release : 2013-01-11
Category : Technology & Engineering
ISBN : 9783642342370

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Piezotronics and Piezo-Phototronics by Zhong Lin Wang Pdf

The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in 2007 and 2010, respectively. Due to the polarization of ions in a crystal that has non-central symmetry in materials, such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. Owing to the simultaneous possession of piezoelectricity and semiconductor properties, the piezopotential created in the crystal has a strong effect on the carrier transport at the interface/junction. Piezotronics is for devices fabricated using the piezopotential as a “gate” voltage to control charge carrier transport at a contact or junction. The piezo-phototronic effect uses the piezopotential to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detector, solar cell and LED. The functionality offered by piezotroics and piezo-phototronics are complimentary to CMOS technology. There is an effective integration of piezotronic and piezo-phototronic devices with silicon based CMOS technology. Unique applications can be found in areas such as human-computer interfacing, sensing and actuating in nanorobotics, smart and personalized electronic signatures, smart MEMS/NEMS, nanorobotics and energy sciences. This book introduces the fundamentals of piezotronics and piezo-phototronics and advanced applications. It gives guidance to researchers, engineers and graduate students.

Physics of Semiconductor Devices

Author : Michael Shur
Publisher : Pearson
Page : 0 pages
File Size : 55,5 Mb
Release : 1990
Category : Bipolar transistors
ISBN : 0136664962

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Physics of Semiconductor Devices by Michael Shur Pdf

This manual contains the PLOTF software, user's guide and program description to accompany Michael Shur's 'Physics of semiconductor devices' - rear cover.

Junctionless Field-Effect Transistors

Author : Shubham Sahay,Mamidala Jagadesh Kumar
Publisher : John Wiley & Sons
Page : 619 pages
File Size : 46,5 Mb
Release : 2019-01-28
Category : Technology & Engineering
ISBN : 9781119523529

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Junctionless Field-Effect Transistors by Shubham Sahay,Mamidala Jagadesh Kumar Pdf

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Electrical & Electronics Abstracts

Author : Anonim
Publisher : Unknown
Page : 2240 pages
File Size : 43,6 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059589358

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Electrical & Electronics Abstracts by Anonim Pdf

Power GaN Devices

Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 41,6 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994

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Power GaN Devices by Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni Pdf

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.