Compound Semiconductor Device Physics

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Compound Semiconductor Device Physics

Author : Sandip Tiwari
Publisher : Academic Press
Page : 845 pages
File Size : 55,9 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483289298

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Compound Semiconductor Device Physics by Sandip Tiwari Pdf

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding

III–V Compound Semiconductors and Devices

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 45,8 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Compound Semiconductors

Author : Ferdinand Scholz
Publisher : CRC Press
Page : 295 pages
File Size : 42,8 Mb
Release : 2017-10-06
Category : Science
ISBN : 9781351858717

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Compound Semiconductors by Ferdinand Scholz Pdf

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

Semiconductor Device Physics and Design

Author : Umesh Mishra,Jasprit Singh
Publisher : Springer Science & Business Media
Page : 583 pages
File Size : 55,8 Mb
Release : 2007-11-28
Category : Technology & Engineering
ISBN : 9781402064807

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Semiconductor Device Physics and Design by Umesh Mishra,Jasprit Singh Pdf

Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 43,7 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351

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Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Compound Semiconductor Device Modelling

Author : Christopher M. Snowden,Robert E. Miles
Publisher : Springer Science & Business Media
Page : 295 pages
File Size : 48,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781447120483

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Compound Semiconductor Device Modelling by Christopher M. Snowden,Robert E. Miles Pdf

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.

Compound Semiconductor Devices

Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
Page : 188 pages
File Size : 45,8 Mb
Release : 2008-11-21
Category : Technology & Engineering
ISBN : 9783527611775

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Compound Semiconductor Devices by Kenneth A. Jackson Pdf

Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.

Modern Semiconductor Device Physics

Author : S. M. Sze
Publisher : Wiley-Interscience
Page : 584 pages
File Size : 40,6 Mb
Release : 1998
Category : Technology & Engineering
ISBN : UOM:39015040577390

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Modern Semiconductor Device Physics by S. M. Sze Pdf

An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.

Devices for Integrated Circuits

Author : H. Craig Casey
Publisher : John Wiley & Sons
Page : 549 pages
File Size : 44,6 Mb
Release : 1998-12-14
Category : Technology & Engineering
ISBN : 9780471171348

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Devices for Integrated Circuits by H. Craig Casey Pdf

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

The Physics of Semiconductor Devices

Author : R. K. Sharma,D.S. Rawal
Publisher : Springer
Page : 1299 pages
File Size : 46,8 Mb
Release : 2019-01-31
Category : Technology & Engineering
ISBN : 9783319976044

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The Physics of Semiconductor Devices by R. K. Sharma,D.S. Rawal Pdf

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Compound Semiconductor Device Modelling

Author : Christopher M. Snowden,Robert E. Miles
Publisher : Springer
Page : 286 pages
File Size : 46,5 Mb
Release : 1993-04-19
Category : Technology & Engineering
ISBN : 354019827X

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Compound Semiconductor Device Modelling by Christopher M. Snowden,Robert E. Miles Pdf

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.

Physical Limitations of Semiconductor Devices

Author : Vladislav A. Vashchenko,V. F. Sinkevitch
Publisher : Springer Science & Business Media
Page : 330 pages
File Size : 43,9 Mb
Release : 2008-03-22
Category : Technology & Engineering
ISBN : 9780387745145

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Physical Limitations of Semiconductor Devices by Vladislav A. Vashchenko,V. F. Sinkevitch Pdf

Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Compound Semiconductors 2004

Author : J.C. Woo,H. Hasegawa,Y.S. Kwon,T. Yao,K.H. Yoo
Publisher : CRC Press
Page : 548 pages
File Size : 43,5 Mb
Release : 2005-04-01
Category : Science
ISBN : 0750310170

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Compound Semiconductors 2004 by J.C. Woo,H. Hasegawa,Y.S. Kwon,T. Yao,K.H. Yoo Pdf

Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.

Compound Semiconductors 2002

Author : Marc Ilegems,Gunter Weimann,Joachim Wagner
Publisher : CRC Press
Page : 492 pages
File Size : 40,6 Mb
Release : 2003-09-01
Category : Science
ISBN : 9781482269109

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Compound Semiconductors 2002 by Marc Ilegems,Gunter Weimann,Joachim Wagner Pdf

A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electr

Novel Compound Semiconductor Nanowires

Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Page : 501 pages
File Size : 52,8 Mb
Release : 2017-10-17
Category : Science
ISBN : 9781315340722

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Novel Compound Semiconductor Nanowires by Fumitaro Ishikawa,Irina Buyanova Pdf

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.