Defects Recognition Imaging And Physics In Semiconductors Xiv
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Defects-Recognition, Imaging and Physics in Semiconductors XIV by Hiroshi Yamada-Kaneta,Akira Sakai Pdf
Selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), September 25-29, 2011, Miyazaki, Japan
Defect Recognition and Image Processing in Semiconductors 1997 by J. Doneker Pdf
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Defect Recognition and Image Processing in Semiconductors 1997 by J. Doneker,I. Rechenberg Pdf
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Defect Recognition and Image Processing in Semiconductors 1997 by J. Donecker,I. Rechenberg Pdf
"Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide."--Provided by publisher.
Defect Recognition and Image Processing in Semiconductors and Devices, Proceedings of the 5th INT Conference, 6-10 September 1993, Santander, Spain by Juan Jiménez Pdf
The fifth in this series of conferences was held in Santander, Spain from 6 to 10 September 1993, and was attended by workers from industry and research institutes worldwide. Device yield is a crucial factor for determining the choice of semiconducting material made by manufacturers, and that choice is based upon a knowledge of how defects might affect a particular substrate, epilayer or base material. The DRIP conference series was instigated to address the mapping of these technologically important defects. Topics covered at the meeting included silicon, and compound semiconductor substrates and epilayers. Methods for defect recognition included tunelling microscopy, inelastic light scattering (Raman), elastic light scattering, photoluminescence mapping, defect characterization, optical probe beams, and effects of defects on devices. The meeting focused in particular on the microscopic nature of as-grown defects: their distribution as a function of growth conditions, and their redistribution under subsequent heat treatments. The conference dealt with the increasing number and sophistication of visualization techniques which map physical properties of defects, and which may in future permit better control of defect engineering. Researchers in solid state or device physics, or electrical engineering will find this volume an invaluable, up to date reference on the latest techniques for the identification of defects, developments in their control, implications for device fabrication, and future directions for the analysis and mapping of semiconductors.
Defects and Diffusion in Semiconductors XIV by David J. Fisher Pdf
This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.
Defect Recognition and Image Processing in Semiconductors 1997 by J. Doneker Pdf
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals by Daniel Montero Álvarez Pdf
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Physics and Technology of High-k Gate Dielectrics 4 by Samares Kar Pdf
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Defect Recognition and Image Processing in Semiconductors 1995 by A.R Mickelson Pdf
These proceedings provide an overview of research into defect inhomogeneities semiconductor materials and (as grown) devices. Defect inhomogeneities affect the performance of both as grown and processed semiconductors. A valuable overview of mapping and microscopy techniques for the study of such defects and an insight into the effect of such defects on device performance.
