Dielectric Material Integration For Microelectronics

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Dielectric Material Integration for Microelectronics

Author : William D. Brown,Electrochemical Society. Dielectric Science and Technology Division,Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 384 pages
File Size : 44,6 Mb
Release : 1998
Category : Technology & Engineering
ISBN : 1566771978

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Dielectric Material Integration for Microelectronics by William D. Brown,Electrochemical Society. Dielectric Science and Technology Division,Electrochemical Society. Meeting Pdf

Low Dielectric Constant Materials for IC Applications

Author : Paul S. Ho,Jihperng Leu,Wei William Lee
Publisher : Springer Science & Business Media
Page : 310 pages
File Size : 46,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642559082

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Low Dielectric Constant Materials for IC Applications by Paul S. Ho,Jihperng Leu,Wei William Lee Pdf

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for

Dielectric Films for Advanced Microelectronics

Author : Mikhail Baklanov,Karen Maex,Martin Green
Publisher : John Wiley & Sons
Page : 508 pages
File Size : 53,7 Mb
Release : 2007-04-04
Category : Technology & Engineering
ISBN : 9780470065419

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Dielectric Films for Advanced Microelectronics by Mikhail Baklanov,Karen Maex,Martin Green Pdf

The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Interlayer Dielectrics for Semiconductor Technologies

Author : Shyam P Muraka,Moshe Eizenberg,Ashok K Sinha
Publisher : Elsevier
Page : 464 pages
File Size : 54,7 Mb
Release : 2003-10-13
Category : Science
ISBN : 0080521959

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Interlayer Dielectrics for Semiconductor Technologies by Shyam P Muraka,Moshe Eizenberg,Ashok K Sinha Pdf

Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.

50 Years of Materials Science in Singapore

Author : Freddy Boey,B V R Chowdari,Subbu S Venkatraman
Publisher : World Scientific
Page : 244 pages
File Size : 45,8 Mb
Release : 2016-06-17
Category : Science
ISBN : 9789814730716

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50 Years of Materials Science in Singapore by Freddy Boey,B V R Chowdari,Subbu S Venkatraman Pdf

50 Years of Materials Science in Singapore describes in vivid detail how a newly independent nation like Singapore developed world-class research capabilities in materials science that helped the country make rapid progress in energy, biomedical and electronics sectors. The economy mirrored this rapid trail of progress, utilizing home-grown technology and the contribution of materials science to the various sectors is undeniable in ensuring the economic growth and stability of Singapore. Contents:Historical Narrative Early Beginnings to Present (Freddy Boey)Composites, Nanocomposites and Hybrid Materials (Chaobin He, Xiao Hu, Zhang Yu and John Wang)Materials for Water Remediation (Membranes) (Sui Zhang, Lin Luo, Zhi Wei Thong and Tai-Shung Chung)Nanostructured Catalytic and Adsorbent Materials for Water Remediation (Zhong Chen and Teik Thye Lim) Solar Energy and Energy Storage Materials and Devices Research in Singapore (D Sabba, J Wang, M Srinivasan, A G Aberle and S Mhaisalkar )50 Years of Biomaterials Research in Singapore (Subbu Venkatraman, Swee Hin Teoh and Ali Miserez)2D Materials (Andrew T S Wee, Kian Ping Loh and Antonio H Castro Neto)Electronic Materials Research in Singapore (Chee Ying Khoo, Pooi See Lee, Sze Ter Lim and Chee Lip Gan)"Singaporean" Materials Science: What Does the Future Hold? (Subbu Venkatraman) Readership: General public, people interested in history of Singapore, people interested in materials science.

Microelectronic Materials and Processes

Author : R.A. Levy
Publisher : Springer Science & Business Media
Page : 992 pages
File Size : 45,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9789400909175

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Microelectronic Materials and Processes by R.A. Levy Pdf

The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.

Handbook of Low and High Dielectric Constant Materials and Their Applications, Two-Volume Set

Author : Hari Singh Nalwa
Publisher : Elsevier
Page : 1108 pages
File Size : 43,8 Mb
Release : 1999-09-07
Category : Science
ISBN : 9780080533537

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Handbook of Low and High Dielectric Constant Materials and Their Applications, Two-Volume Set by Hari Singh Nalwa Pdf

Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.

High-k Gate Dielectric Materials

Author : Niladri Pratap Maity,Reshmi Maity,Srimanta Baishya
Publisher : CRC Press
Page : 248 pages
File Size : 47,8 Mb
Release : 2020-12-18
Category : Science
ISBN : 9781000527445

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High-k Gate Dielectric Materials by Niladri Pratap Maity,Reshmi Maity,Srimanta Baishya Pdf

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

High Dielectric Constant Materials

Author : Howard Huff
Publisher : Springer Science & Business Media
Page : 740 pages
File Size : 46,5 Mb
Release : 2005
Category : Science
ISBN : 3540210814

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High Dielectric Constant Materials by Howard Huff Pdf

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Defects in Microelectronic Materials and Devices

Author : Daniel M. Fleetwood,Ronald D. Schrimpf
Publisher : CRC Press
Page : 772 pages
File Size : 49,5 Mb
Release : 2008-11-19
Category : Science
ISBN : 9781420043778

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Defects in Microelectronic Materials and Devices by Daniel M. Fleetwood,Ronald D. Schrimpf Pdf

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Dielectric Material

Author : Marius Alexandru Silaghi
Publisher : BoD – Books on Demand
Page : 316 pages
File Size : 42,9 Mb
Release : 2012-10-03
Category : Science
ISBN : 9789535107644

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Dielectric Material by Marius Alexandru Silaghi Pdf

This book attempts to bring together the theory and practice of dielectric materials for different kind of industrial applications. Fragmented information on dielectric theory and properties of materials, design of equipment and state of the art in applications relevant to the manufacturing industry should be collated and updated and presented as a single reference volume. In this book relevant and useful information is presented in the quoted literature and covered by our key patent applications.

Silicon Materials Science and Technology X

Author : Howard R. Huff,H. Iwai,H. Richter
Publisher : The Electrochemical Society
Page : 599 pages
File Size : 43,7 Mb
Release : 2006
Category : Semiconductors
ISBN : 9781566774390

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Silicon Materials Science and Technology X by Howard R. Huff,H. Iwai,H. Richter Pdf

This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.

Nanofluid Flow in Porous Media

Author : Mohsen Sheikholeslami Kandelousi,Sadia Ameen,M. Shaheer Akhtar,Hyung-Shik Shin
Publisher : BoD – Books on Demand
Page : 246 pages
File Size : 45,6 Mb
Release : 2020-08-19
Category : Science
ISBN : 9781789238372

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Nanofluid Flow in Porous Media by Mohsen Sheikholeslami Kandelousi,Sadia Ameen,M. Shaheer Akhtar,Hyung-Shik Shin Pdf

Studies of fluid flow and heat transfer in a porous medium have been the subject of continuous interest for the past several decades because of the wide range of applications, such as geothermal systems, drying technologies, production of thermal isolators, control of pollutant spread in groundwater, insulation of buildings, solar power collectors, design of nuclear reactors, and compact heat exchangers, etc. There are several models for simulating porous media such as the Darcy model, Non-Darcy model, and non-equilibrium model. In porous media applications, such as the environmental impact of buried nuclear heat-generating waste, chemical reactors, thermal energy transport/storage systems, the cooling of electronic devices, etc., a temperature discrepancy between the solid matrix and the saturating fluid has been observed and recognized.

Low-Dielectric Constant Materials V: Volume 565

Author : John Hummel,Kazuhiko Endo,Wei William Lee,Michael Mills,Shi-Qing Wang
Publisher : Cambridge University Press
Page : 0 pages
File Size : 52,5 Mb
Release : 2000-01-12
Category : Technology & Engineering
ISBN : 1558994726

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Low-Dielectric Constant Materials V: Volume 565 by John Hummel,Kazuhiko Endo,Wei William Lee,Michael Mills,Shi-Qing Wang Pdf

Interest in developing low-dielectric constant materials is driven by requirements from the microelectronics sector to improve performance in interconnections by reducing parasitic capacitance and cross talk. The continuing increase in density of semiconductor devices is becoming limited by the dielectric properties of the insulator which threatens to slow the rate of productivity. The requirement for dielectric constant is rapidly approaching an e value of 2.0, with continued improvement sought even below this level to maintain this progression, commonly known as Moore's Law. Synthetic methods of obtaining materials in this range are addressed in this book. The materials solution to the interconnect problem - changing the insulator to lower the dielectric constant from 4.0, the e of silicon dioxide - introduces a host of reliability concerns, as well as changes to the process of manufacturing semiconductor devices. Topics include: porous films - organic and inorganic; porous films - organic/low-k integration; low-k integration; low-k/advanced interconnect; low-dielectric constant materials and applications in microelectronics and low-k film property/integration.

Chemistry in Microelectronics

Author : Yannick Le Tiec
Publisher : John Wiley & Sons
Page : 261 pages
File Size : 47,6 Mb
Release : 2013-02-28
Category : Technology & Engineering
ISBN : 9781118578124

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Chemistry in Microelectronics by Yannick Le Tiec Pdf

Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.