Download Full eBooks in PDF
Fabrication Of Submicron Self Aligned Regrown Emitter Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Fabrication Of Submicron Self Aligned Regrown Emitter Heterojunction Bipolar Transistors book. This book definitely worth reading, it is an incredibly well-written.
Author : Sang Hoon Park
Publisher : Unknown
Page : 344 pages
File Size : 41,8 Mb
Release : 1997
Category : Electronic
ISBN : UCSD:31822023429632
Author : Anonim
Publisher : Unknown
Page : 2616 pages
File Size : 48,7 Mb
Release : 2002
Category : Chemistry
ISBN : UOM:39015057321351
Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 51,6 Mb
Release : 2024-06-01
Category : Electronic
ISBN : 9789814501064
Author : H Sakaki,J.C. Woo,N Yokoyama,Y Harayama
Publisher : CRC Press
Page : 931 pages
File Size : 46,5 Mb
Release : 2021-02-01
Category : Science
ISBN : 9781000157147
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Author : M. F. Chang
Publisher : World Scientific
Page : 448 pages
File Size : 45,6 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810220979
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author : Anonim
Publisher : Unknown
Page : 768 pages
File Size : 49,9 Mb
Release : 2004
Category : Dissertations, Academic
ISBN : UOM:39015057953377
Author : Anonim
Publisher : Unknown
Page : 186 pages
File Size : 43,5 Mb
Release : 1995
Category : Integrated circuits
ISBN : UOM:39015035254831
Author : Marin Alexe,Ulrich Gösele
Publisher : Springer Science & Business Media
Page : 510 pages
File Size : 49,7 Mb
Release : 2013-03-09
Category : Science
ISBN : 9783662108277
The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Author : Anonim
Publisher : Unknown
Page : 948 pages
File Size : 47,8 Mb
Release : 1993
Category : Electrical engineering
ISBN : OSU:32435060206125
Author : Michael Reisch
Publisher : Springer Science & Business Media
Page : 671 pages
File Size : 53,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642559006
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 49,7 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Gary A. Evans,J. M. Hammer
Publisher : Unknown
Page : 528 pages
File Size : 47,5 Mb
Release : 1993
Category : Technology & Engineering
ISBN : UOM:39015029968842
Reviews all the basic types of surface emitting semiconductor lasers, including vertical cavity, etched-mirror integrated beam deflectors and grating out-coupled devices. The book also addresses such topics as edge-emitting arrays, thermal management and coherence.
Author : Ban Wong,Anurag Mittal,Yu Cao,Greg W. Starr
Publisher : John Wiley & Sons
Page : 413 pages
File Size : 49,7 Mb
Release : 2005-04-08
Category : Technology & Engineering
ISBN : 9780471678861
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
Page : 800 pages
File Size : 46,8 Mb
Release : 2015-06-29
Category : Technology & Engineering
ISBN : 9780471739067
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Richard C. Jaeger
Publisher : Pearson
Page : 0 pages
File Size : 48,9 Mb
Release : 2002
Category : Integrated circuit
ISBN : 0201444941
For courses in Theory and Fabrication of Integrated Circuits. The author's goal in writing this text was to present a concise survey of the most up-to-date techniques in the field. It is devoted exclusively to processing, and is highlighted by careful explanations, clear, simple language, and numerous fully-solved example problems. This work assumes a minimal knowledge of integrated circuits and of terminal behavior of electronic components such as resistors, diodes, and MOS and bipolar transistors.