Hot Carrier Reliability Of Integrated Circuits

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Hot-Carrier Reliability of MOS VLSI Circuits

Author : Yusuf Leblebici,Sung-Mo (Steve) Kang
Publisher : Springer Science & Business Media
Page : 223 pages
File Size : 55,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461532507

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Hot-Carrier Reliability of MOS VLSI Circuits by Yusuf Leblebici,Sung-Mo (Steve) Kang Pdf

As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Hot Carrier Degradation in Semiconductor Devices

Author : Tibor Grasser
Publisher : Springer
Page : 518 pages
File Size : 53,9 Mb
Release : 2014-10-29
Category : Technology & Engineering
ISBN : 9783319089942

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Hot Carrier Degradation in Semiconductor Devices by Tibor Grasser Pdf

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Hot-carrier Reliability of Integrated Circuits

Author : Khandker Nazrul Quader
Publisher : Unknown
Page : 368 pages
File Size : 41,7 Mb
Release : 1993
Category : Electronic
ISBN : UCAL:C3373345

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Hot-carrier Reliability of Integrated Circuits by Khandker Nazrul Quader Pdf

Hot-Carrier Effects in MOS Devices

Author : Eiji Takeda,Cary Y. Yang,Akemi Miura-Hamada
Publisher : Elsevier
Page : 329 pages
File Size : 43,7 Mb
Release : 1995-11-28
Category : Technology & Engineering
ISBN : 9780080926223

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Hot-Carrier Effects in MOS Devices by Eiji Takeda,Cary Y. Yang,Akemi Miura-Hamada Pdf

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Analog IC Reliability in Nanometer CMOS

Author : Elie Maricau,Georges Gielen
Publisher : Springer Science & Business Media
Page : 208 pages
File Size : 42,9 Mb
Release : 2013-01-11
Category : Technology & Engineering
ISBN : 9781461461630

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Analog IC Reliability in Nanometer CMOS by Elie Maricau,Georges Gielen Pdf

This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.

Hot Carrier Design Considerations for MOS Devices and Circuits

Author : Cheng Wang
Publisher : Springer Science & Business Media
Page : 345 pages
File Size : 48,6 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468485479

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Hot Carrier Design Considerations for MOS Devices and Circuits by Cheng Wang Pdf

As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Guidebook for Managing Silicon Chip Reliability

Author : Michael Pecht,Riko Radojcic,Gopal Rao
Publisher : CRC Press
Page : 205 pages
File Size : 52,5 Mb
Release : 2017-11-22
Category : Technology & Engineering
ISBN : 9781351443562

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Guidebook for Managing Silicon Chip Reliability by Michael Pecht,Riko Radojcic,Gopal Rao Pdf

Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.

Linear CMOS RF Power Amplifiers

Author : Hector Solar Ruiz,Roc Berenguer Pérez
Publisher : Springer Science & Business Media
Page : 191 pages
File Size : 50,7 Mb
Release : 2013-09-14
Category : Technology & Engineering
ISBN : 9781461486572

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Linear CMOS RF Power Amplifiers by Hector Solar Ruiz,Roc Berenguer Pérez Pdf

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.

Failure Analysis

Author : Marius Bazu,Titu Bajenescu
Publisher : John Wiley & Sons
Page : 372 pages
File Size : 43,8 Mb
Release : 2011-03-08
Category : Technology & Engineering
ISBN : 9781119990000

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Failure Analysis by Marius Bazu,Titu Bajenescu Pdf

Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Reliability of Nanoscale Circuits and Systems

Author : Miloš Stanisavljević,Alexandre Schmid,Yusuf Leblebici
Publisher : Springer Science & Business Media
Page : 215 pages
File Size : 51,6 Mb
Release : 2010-10-20
Category : Technology & Engineering
ISBN : 9781441962171

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Reliability of Nanoscale Circuits and Systems by Miloš Stanisavljević,Alexandre Schmid,Yusuf Leblebici Pdf

This book is intended to give a general overview of reliability, faults, fault models, nanotechnology, nanodevices, fault-tolerant architectures and reliability evaluation techniques. Additionally, the book provides an in depth state-of-the-art research results and methods for fault tolerance as well as the methodology for designing fault-tolerant systems out of highly unreliable components.

Thermal and Power Management of Integrated Circuits

Author : Arman Vassighi,Manoj Sachdev
Publisher : Springer Science & Business Media
Page : 188 pages
File Size : 53,7 Mb
Release : 2006-06-01
Category : Technology & Engineering
ISBN : 9780387297491

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Thermal and Power Management of Integrated Circuits by Arman Vassighi,Manoj Sachdev Pdf

In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime. This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.

Integrated Circuit Quality and Reliability

Author : Eugene R. Hnatek
Publisher : Unknown
Page : 736 pages
File Size : 46,6 Mb
Release : 1987
Category : Technology & Engineering
ISBN : UOM:39015011996652

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Integrated Circuit Quality and Reliability by Eugene R. Hnatek Pdf

Examines all important aspects of integrated circuit design, fabrication, assembly and test processes as they relate to quality and reliability. This second edition discusses in detail: the latest circuit design technology trends; the sources of error in wafer fabrication and assembly; avenues of contamination; new IC packaging methods; new in-line process monitors and test structures; and more.;This work should be useful to electrical and electronics, quality and reliability, and industrial engineers; computer scientists; integrated circuit manufacturers; and upper-level undergraduate, graduate and continuing-education students in these disciplines.

Proceedings of the Third International Symposium on Corrosion and Reliability of Electronic Materials and Devices

Author : Robert B. Comizzoli,Robert Peter Frankenthal,James Douglas Sinclair
Publisher : The Electrochemical Society
Page : 436 pages
File Size : 51,6 Mb
Release : 1994
Category : Science
ISBN : 1566770882

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Proceedings of the Third International Symposium on Corrosion and Reliability of Electronic Materials and Devices by Robert B. Comizzoli,Robert Peter Frankenthal,James Douglas Sinclair Pdf

The VLSI Handbook

Author : Wai-Kai Chen
Publisher : CRC Press
Page : 1788 pages
File Size : 54,8 Mb
Release : 2019-07-17
Category : Technology & Engineering
ISBN : 1420049674

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The VLSI Handbook by Wai-Kai Chen Pdf

Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.