Interfacial Engineering For Optimized Properties Volume 458

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Interfacial Engineering for Optimized Properties: Volume 458

Author : Clyde L. Briant,C. Barry Carter,Ernest L. Hall
Publisher : Unknown
Page : 546 pages
File Size : 40,7 Mb
Release : 1997-07-08
Category : Science
ISBN : UCSD:31822024031650

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Interfacial Engineering for Optimized Properties: Volume 458 by Clyde L. Briant,C. Barry Carter,Ernest L. Hall Pdf

The study of interfaces is one of the oldest areas of research in materials science. The presence of grain boundaries in materials has long been recognized, as has its crucial role in determining mechanical properties. Another long-recognized concept is that the properties of a surface are quite different from those of the bulk. In recent years, researchers have been able to study these interfaces, both internal and external, with a detail not before possible. These advances have stemmed from the ability to obtain atomic resolution images of interfaces, to measure accurate chemical compositions of interfaces, and to model these interfaces and their properties. This volume goes a step further, beyond structural and chemical studies, to explore how all of this information can be used to engineer interfaces for improved properties and overall improved material performance. Significant attention is given to the crystallographic nature of grain boundaries and interfaces, and the relationship between this nature and the performance of a material. The versatility of electron back-scattering pattern analysis (EBSP) in solving a number of interface-related problems is also featured.

Interfacial Engineering for Optimized Properties II: Volume 586

Author : C. Barry Carter
Publisher : Unknown
Page : 338 pages
File Size : 46,5 Mb
Release : 2000-10-02
Category : Technology & Engineering
ISBN : UCSD:31822028476588

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Interfacial Engineering for Optimized Properties II: Volume 586 by C. Barry Carter Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2000, concentrates on the preparation and processing of interfaces, the relationships between chemistry and structure and the properties and behavior of interfaces, particularly in relation to strength and bonding.

Interfacial Engineering for Optimized Properties III: Volume 819

Author : Christopher A. Schuh
Publisher : Unknown
Page : 336 pages
File Size : 45,8 Mb
Release : 2004-07-16
Category : Technology & Engineering
ISBN : UCSD:31822032313033

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Interfacial Engineering for Optimized Properties III: Volume 819 by Christopher A. Schuh Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Thin Films - Structure and Morphology: Volume 441

Author : Steven C. Moss
Publisher : Unknown
Page : 904 pages
File Size : 48,9 Mb
Release : 1997-07-29
Category : Technology & Engineering
ISBN : UOM:39015041286850

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Thin Films - Structure and Morphology: Volume 441 by Steven C. Moss Pdf

An interdisciplinary group of materials scientists, physicists, chemists and engineers come together in this book to discuss recent advances in the structure and morphology of thin films. Both scientific and technological issues are addressed. Work on thin films for a host of applications including microelectronics, optics, tribology, biomedical technologies and microelectromechanical systems (MEMS) are featured. Topics include: kinetics of growth; grain growth; instabilities, segregation and ordering; silicides; metallization; stresses in thin films; deposition and growth simulations; energetic growth processes; diamond films and carbide and nitride films.

Infrared Applications of Semiconductors: Volume 450

Author : M. Omar Manasreh,Thomas H. Myers,François H. Julien
Publisher : Unknown
Page : 512 pages
File Size : 47,6 Mb
Release : 1997-03-17
Category : Technology & Engineering
ISBN : UOM:39015040659677

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Infrared Applications of Semiconductors: Volume 450 by M. Omar Manasreh,Thomas H. Myers,François H. Julien Pdf

This book is unique in that it combines for the first time the infrared detectors and infrared lasers and emitters in one volume. It is merely a step, however, in a very fast-changing field, toward achieving an understanding of novel structures that can be used for high-performance infrared detectors, imaging arrays, infrared lasers and sources. Internationally-known experts discuss recent advances in materials structures, processing and device performances, with presentations crossing materials and discipline boundaries. Recent investigations based on III-V, II-VI and IV bulk semiconductors, quantum wells, and superlattices for long-wavelength infrared detectors, emitters, sources and materials are featured. Topics include: antimonide-related materials and devices; quantum wells and devices; quantum infrared detectors; HgCdTe - materials, devices and processing; nonlinear and parametric oscillator material; interdiffusion in heterostructures and related topics.

Microstructure Evolution During Irradiation: Volume 439

Author : Ian M. Robertson
Publisher : Unknown
Page : 770 pages
File Size : 51,5 Mb
Release : 1997-06-25
Category : Science
ISBN : UOM:39015041055149

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Microstructure Evolution During Irradiation: Volume 439 by Ian M. Robertson Pdf

This book from MRS discusses the evolution of a material's microstructure as a result of its interaction with energetic particles such as ions, neutrons or electrons. The book is inter-disciplinary and emphasizes all classes of materials including metals, intermetallic compounds, ceramics, polymers, superconductors, semiconductors and insulators. A strong focus is placed on experimental techniques for measuring and quantifying damage and microstructure changes, and on computer simulation techniques for predicting and understanding this phenomena. Topics include: ion-implantation damage in semiconductors; radiation damage in metals; radiation damage in ceramics; radiation effects in polymers and beam-induced effects.

Electronic Packaging Materials Science IX: Volume 445

Author : Steven K. Groothuis
Publisher : Unknown
Page : 344 pages
File Size : 45,9 Mb
Release : 1997-10-20
Category : Technology & Engineering
ISBN : UCSD:31822025650185

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Electronic Packaging Materials Science IX: Volume 445 by Steven K. Groothuis Pdf

While this book continues the spirit of the MRS series on materials science related to the development of electronic packaging, it also focuses on three very specific technological areas - technology for flip-chip packaging, materials metrology and characterization, and packaging reliability and testing. These are important areas for technology development in electronic packaging, particularly since materials and processing play an important role in controlling system performance and reliability. Topics include: flip-chip and solder technology; future packaging technology; manufacturing technology in packaging; packaging materials and metrology; interfacial adhesion and fracture and packaging reliability and testing.

Structure and Evolution of Surfaces: Volume 440

Author : Robert C. Cammarata
Publisher : Unknown
Page : 536 pages
File Size : 42,7 Mb
Release : 1997-11-13
Category : Science
ISBN : UOM:39015041534689

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Structure and Evolution of Surfaces: Volume 440 by Robert C. Cammarata Pdf

This book brings together an interdisciplinary group of surface physicists, chemists and materials scientists to present the most current advances in the area of surface science. Both scientific and technological issues are addressed. Topics include: surface and step structure; morphology, roughness and instabilities; kinetic processes; nucleation on surfaces and interfaces; mechanics of surfaces; self-assembled and Langmuir-Blodgett films; thin-film surfaces and growth; chemistry and modification of surfaces and metal-semiconductor interfaces.

Low-Dielectric Constant Materials II: Volume 443

Author : André Lagendijk
Publisher : Unknown
Page : 224 pages
File Size : 51,6 Mb
Release : 1997-08-19
Category : Technology & Engineering
ISBN : UCSD:31822025647280

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Low-Dielectric Constant Materials II: Volume 443 by André Lagendijk Pdf

Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.

Advances in Microcrystalline and Nanocrystalline: Volume 452

Author : Robert W. Collins
Publisher : Unknown
Page : 1098 pages
File Size : 50,9 Mb
Release : 1997-03-13
Category : Science
ISBN : UOM:39015040659669

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Advances in Microcrystalline and Nanocrystalline: Volume 452 by Robert W. Collins Pdf

Proceedings of the December 1996 symposium. Contains 159 papers which describe materials advances involving stuctures spanning more than five orders of magnitude in size--from Group IV molecular clusters to single-crystal grains large enough for fabrication of thin-film transistors within their boundaries. Sections cover topics such as the theory of semiconductor molecular clusters and nanocrystals; luminescent Group IV clusters/nanocrystals and quantum wells; semiconductor systems confined in three and one dimensions; Group III- V, Group II-VI, and metal sulfide, iodide, and oxide nanocrystals; porous silicon; applications of nanocrystal and porous semiconductors; light-emitting properties and applications of porous Si; and research results on the nano-, micro-, and polycrystalline thin films. Annotation copyrighted by Book News, Inc., Portland, OR

Nanophase and Nanocomposite Materials II: Volume 457

Author : Sridhar Komarneni,John C. Parker,Heinrich J. Wollenberger
Publisher : Unknown
Page : 584 pages
File Size : 54,9 Mb
Release : 1997-04-22
Category : Science
ISBN : UCSD:31822023737174

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Nanophase and Nanocomposite Materials II: Volume 457 by Sridhar Komarneni,John C. Parker,Heinrich J. Wollenberger Pdf

This book provides an international and interdisciplinary forum for the discussion of advances in the research of nanophase and nanocomposites. The term 'nanophase' refers to nanoscale particles of one phase, whereas the term 'nanocomposite'refers to a composite of more than one Gibbsian solid phase where at least one dimension is in the nanometer range. The book, the second in a series, features reports showing that bulk materials with nanostructure (‹ 0.5µm) often have enhanced and unique properties when compared to their coarse-structured (›1µm) equivalents. A wide range of science and engineering disciplines are represented, with topics ranging from synthesis and processing, to properties and applications. Topics include: nanophase oxides; nanophase metals, alloys and non-oxides; nanophases - simulation studies; magnetic and metal nanocomposites; oxide, non-oxide and oxide-metal nanocomposites; organic-inorganic and sol-gel nanocomposites; and nanocomposites of layered and mesoporous materials.

Defects in Electronic Materials II: Volume 442

Author : Jürgen Michel
Publisher : Unknown
Page : 744 pages
File Size : 45,7 Mb
Release : 1997-05-02
Category : Technology & Engineering
ISBN : UOM:39015040692652

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Defects in Electronic Materials II: Volume 442 by Jürgen Michel Pdf

The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.

Solid State Chemistry of Inorganic Materials: Volume 453

Author : Peter K. Davies
Publisher : Unknown
Page : 776 pages
File Size : 47,6 Mb
Release : 1997-06-02
Category : Science
ISBN : UCSD:31822024030314

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Solid State Chemistry of Inorganic Materials: Volume 453 by Peter K. Davies Pdf

The importance and scope of solid-state chemistry has grown in response to the continuing challenge to understand, control and predict the structures and properties of solids at the atomic level, and to synthesize new compounds with enhanced physical response. The many successes in the preparation of materials with unique electronic, optical, magnetic and catalytic properties are a clear testament to the vitality and importance of solid-state chemistry to materials research. This book provides an interdisciplinary forum for discussion and exchange of ideas on both the recent advances in solid-state chemistry and their impact on the development and application of inorganic materials. Topics include: chalcogenides; synthesis and reactivity; materials synthesis; theory; optical properties; electronic and magnetic properties; dielectrics and ferroelectrics; solid-state ionics and surfaces and interfaces.