Advanced Gate Stacks For High Mobility Semiconductors
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Advanced Gate Stacks for High-Mobility Semiconductors by Athanasios Dimoulas,Evgeni Gusev,Paul C. McIntyre,Marc Heyns Pdf
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 by Fred Roozeboom Pdf
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment by E. P. Gusev Pdf
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by V. Narayanan Pdf
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by P. J. Timans Pdf
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 by S. Kar,M. Houssa,S. Van Elshocht,D. Misra,K. Kita,D. Landheer,S. Dayeh,H. Jagannathan Pdf
Physics and Technology of High-k Gate Dielectrics 6 by S. Kar Pdf
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Handbook for Cleaning for Semiconductor Manufacturing by Karen A. Reinhardt,Richard F. Reidy Pdf
Provides an In-depth discussion of surface conditioning for semiconductor applications The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching. Topics covered in this new reference include: Front end line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation Formulation development practices, methodology and a new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and water bonding, as well as the filtering and recirculating of chemicals including reuse and recycling Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications is a valuable resource for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible reference.
High Permittivity Gate Dielectric Materials by Samares Kar Pdf
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Mechanical Stress on the Nanoscale by Margrit Hanbücken,Pierre Müller,Ralf B. Wehrspohn Pdf
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) by Bernd O. Kolbesen Pdf
The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.
Springer Handbook of Semiconductor Devices by Massimo Rudan,Rossella Brunetti,Susanna Reggiani Pdf
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
